{"title":"利用可调谐的拉什巴自旋轨道耦合在 CaZrO3/KTaO3 异界面创建二维电子气体","authors":"Shaojin Qi, Jiexing Liang, Guimei Shi, Yulin Gan, Yuansha Chen*, Yunzhong Chen* and Jirong Sun*, ","doi":"10.1021/acsaelm.4c0161810.1021/acsaelm.4c01618","DOIUrl":null,"url":null,"abstract":"<p >Compared to SrTiO<sub>3</sub>-based 3d two-dimensional electron gases (2DEGs), KTaO<sub>3</sub>-based 5d 2DEGs have much more exceptional physical properties, such as a higher Curie temperature of spin-polarized 2DEG, higher <i>T</i><sub><i>c</i></sub> for the 2DEG at superconducting state, and larger spin–orbit coupling. Herein, the CaZrO<sub>3</sub> (CZO) films were deposited on KTaO<sub>3</sub> (001) substrates at the deposition temperature varied from 700 °C to room temperature, and the conductive CZO/KTO interface was obtained at all deposition temperatures. The conductivity of the CZO/KTO heterointerface exhibits critical dependence on the film thickness, where the critical thickness for conduction increases from 3.2 to 6 nm when decreasing the deposition temperature from 700 °C to room temperature. Moreover, the electric properties of the heterointerface grown at room temperature can be modulated strongly by the light illumination. The strength of the spin–orbit coupling exhibits large relative variation with the carrier density. Under the light illumination, the strength of the spin–orbit coupling increases from ∼3.9 × 10<sup>–12</sup> eV m to the maximum of ∼9 × 10<sup>–12</sup> eV m, with the maximal change of the carrier density of only 3 × 10<sup>12</sup> cm<sup>–2</sup>. The present work demonstrates an effective tuning of the special 5d-electron-based 2DEGs by light illumination, showing a feasible way for advanced optoelectronic device application.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8404–8412 8404–8412"},"PeriodicalIF":4.3000,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Creation of Two-Dimensional Electron Gas at the Heterointerface of CaZrO3/KTaO3 with Tunable Rashba Spin–Orbit Coupling\",\"authors\":\"Shaojin Qi, Jiexing Liang, Guimei Shi, Yulin Gan, Yuansha Chen*, Yunzhong Chen* and Jirong Sun*, \",\"doi\":\"10.1021/acsaelm.4c0161810.1021/acsaelm.4c01618\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Compared to SrTiO<sub>3</sub>-based 3d two-dimensional electron gases (2DEGs), KTaO<sub>3</sub>-based 5d 2DEGs have much more exceptional physical properties, such as a higher Curie temperature of spin-polarized 2DEG, higher <i>T</i><sub><i>c</i></sub> for the 2DEG at superconducting state, and larger spin–orbit coupling. Herein, the CaZrO<sub>3</sub> (CZO) films were deposited on KTaO<sub>3</sub> (001) substrates at the deposition temperature varied from 700 °C to room temperature, and the conductive CZO/KTO interface was obtained at all deposition temperatures. The conductivity of the CZO/KTO heterointerface exhibits critical dependence on the film thickness, where the critical thickness for conduction increases from 3.2 to 6 nm when decreasing the deposition temperature from 700 °C to room temperature. Moreover, the electric properties of the heterointerface grown at room temperature can be modulated strongly by the light illumination. The strength of the spin–orbit coupling exhibits large relative variation with the carrier density. Under the light illumination, the strength of the spin–orbit coupling increases from ∼3.9 × 10<sup>–12</sup> eV m to the maximum of ∼9 × 10<sup>–12</sup> eV m, with the maximal change of the carrier density of only 3 × 10<sup>12</sup> cm<sup>–2</sup>. 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引用次数: 0
摘要
与基于SrTiO3的三维二维电子气体(2DEG)相比,基于KTaO3的五维二维电子气体具有更优异的物理性质,例如自旋极化2DEG的居里温度更高、超导态2DEG的Tc更高以及自旋轨道耦合更大。本文在 KTaO3(001)基底上沉积了 CaZrO3(CZO)薄膜,沉积温度从 700 ℃ 到室温不等,在所有沉积温度下都获得了导电的 CZO/KTO 界面。CZO/KTO 异质界面的导电性与薄膜厚度呈临界关系,当沉积温度从 700 °C 降低到室温时,导电的临界厚度从 3.2 纳米增加到 6 纳米。此外,在室温下生长的异质表面的电学特性可受光照的强烈调制。自旋轨道耦合的强度随载流子密度的变化而呈现较大的相对变化。在光照下,自旋轨道耦合强度从 ∼3.9 × 10-12 eV m 增加到最大值 ∼9 × 10-12 eV m,而载流子密度的最大变化仅为 3 × 1012 cm-2。本研究成果证明了通过光照可以有效地调节基于 5d 电子的特殊二维电子元件,为先进光电器件的应用提供了一条可行的途径。
Creation of Two-Dimensional Electron Gas at the Heterointerface of CaZrO3/KTaO3 with Tunable Rashba Spin–Orbit Coupling
Compared to SrTiO3-based 3d two-dimensional electron gases (2DEGs), KTaO3-based 5d 2DEGs have much more exceptional physical properties, such as a higher Curie temperature of spin-polarized 2DEG, higher Tc for the 2DEG at superconducting state, and larger spin–orbit coupling. Herein, the CaZrO3 (CZO) films were deposited on KTaO3 (001) substrates at the deposition temperature varied from 700 °C to room temperature, and the conductive CZO/KTO interface was obtained at all deposition temperatures. The conductivity of the CZO/KTO heterointerface exhibits critical dependence on the film thickness, where the critical thickness for conduction increases from 3.2 to 6 nm when decreasing the deposition temperature from 700 °C to room temperature. Moreover, the electric properties of the heterointerface grown at room temperature can be modulated strongly by the light illumination. The strength of the spin–orbit coupling exhibits large relative variation with the carrier density. Under the light illumination, the strength of the spin–orbit coupling increases from ∼3.9 × 10–12 eV m to the maximum of ∼9 × 10–12 eV m, with the maximal change of the carrier density of only 3 × 1012 cm–2. The present work demonstrates an effective tuning of the special 5d-electron-based 2DEGs by light illumination, showing a feasible way for advanced optoelectronic device application.
期刊介绍:
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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