{"title":"具有石墨烯/1T-CrTe2 异质结构的电磁可读存储器:反常霍尔晶体管","authors":"Surabhi Menon and Umesh V. Waghmare","doi":"10.1039/D4NR02528H","DOIUrl":null,"url":null,"abstract":"<p >Using first-principles theoretical analysis, we demonstrate the spin-polarized anomalous Hall conductivity (AHC) response of a 2D vdW heterostructure of graphene and ferromagnetic CrTe<small><sub>2</sub></small> that can be controlled with a perpendicular electric field <em>E</em>. The origins of AHC and linear magnetoelectric responses are traced to (a) the transfer of electronic charge from graphene to ferromagnetic CrTe<small><sub>2</sub></small> causing an out-of-plane electric polarization <em>P</em> = 1.69 μC cm<small><sup>−2</sup></small> and (b) the crystal field and spin-split Dirac points of graphene. Through <em>H</em>′ = −<em>VP</em>·<em>E</em> coupling, <em>E</em> controls the charge transfer, magnetization and carrier density, switching the spin-polarized Berry curvature as the Fermi energy crosses the split Dirac points of graphene. Based on these, we propose an Anomalous Hall Transistor (AHT) that exploits electronic spin and charge to store binary information, opening up a route to quantum devices based on quantum geometry and magnetoelectric transport.</p>","PeriodicalId":92,"journal":{"name":"Nanoscale","volume":" 2","pages":" 896-903"},"PeriodicalIF":5.8000,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrically and magnetically readable memory with a graphene/1T-CrTe2 heterostructure: anomalous Hall transistor†\",\"authors\":\"Surabhi Menon and Umesh V. Waghmare\",\"doi\":\"10.1039/D4NR02528H\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Using first-principles theoretical analysis, we demonstrate the spin-polarized anomalous Hall conductivity (AHC) response of a 2D vdW heterostructure of graphene and ferromagnetic CrTe<small><sub>2</sub></small> that can be controlled with a perpendicular electric field <em>E</em>. The origins of AHC and linear magnetoelectric responses are traced to (a) the transfer of electronic charge from graphene to ferromagnetic CrTe<small><sub>2</sub></small> causing an out-of-plane electric polarization <em>P</em> = 1.69 μC cm<small><sup>−2</sup></small> and (b) the crystal field and spin-split Dirac points of graphene. Through <em>H</em>′ = −<em>VP</em>·<em>E</em> coupling, <em>E</em> controls the charge transfer, magnetization and carrier density, switching the spin-polarized Berry curvature as the Fermi energy crosses the split Dirac points of graphene. Based on these, we propose an Anomalous Hall Transistor (AHT) that exploits electronic spin and charge to store binary information, opening up a route to quantum devices based on quantum geometry and magnetoelectric transport.</p>\",\"PeriodicalId\":92,\"journal\":{\"name\":\"Nanoscale\",\"volume\":\" 2\",\"pages\":\" 896-903\"},\"PeriodicalIF\":5.8000,\"publicationDate\":\"2024-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanoscale\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2025/nr/d4nr02528h\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale","FirstCategoryId":"88","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/nr/d4nr02528h","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
利用第一原理理论分析,我们证明了石墨烯和铁磁性 CrTe2 的二维 vdW 异质结构的自旋极化反常霍尔电导率(AHC)响应,该响应可与垂直电场 E 相连。AHC 和线性磁电响应的起源可追溯到:(a)电子电荷从石墨烯转移到铁磁性 CrTe2,导致平面外电极化 P = 1.69 µC/cm2;(b)石墨烯的晶体场和自旋分裂狄拉克点。通过 H ′ = -V P.E 耦合,E 控制着电荷转移、磁化和载流子密度,并随着费米能穿过石墨烯的分裂狄拉克点而切换自旋极化贝里曲率。在此基础上,我们提出了一种利用电子自旋和电荷存储二进制信息的反常霍尔晶体管(AHT),为基于量子几何和磁电传输的量子器件开辟了一条道路。
Electrically and magnetically readable memory with a graphene/1T-CrTe2 heterostructure: anomalous Hall transistor†
Using first-principles theoretical analysis, we demonstrate the spin-polarized anomalous Hall conductivity (AHC) response of a 2D vdW heterostructure of graphene and ferromagnetic CrTe2 that can be controlled with a perpendicular electric field E. The origins of AHC and linear magnetoelectric responses are traced to (a) the transfer of electronic charge from graphene to ferromagnetic CrTe2 causing an out-of-plane electric polarization P = 1.69 μC cm−2 and (b) the crystal field and spin-split Dirac points of graphene. Through H′ = −VP·E coupling, E controls the charge transfer, magnetization and carrier density, switching the spin-polarized Berry curvature as the Fermi energy crosses the split Dirac points of graphene. Based on these, we propose an Anomalous Hall Transistor (AHT) that exploits electronic spin and charge to store binary information, opening up a route to quantum devices based on quantum geometry and magnetoelectric transport.
期刊介绍:
Nanoscale is a high-impact international journal, publishing high-quality research across nanoscience and nanotechnology. Nanoscale publishes a full mix of research articles on experimental and theoretical work, including reviews, communications, and full papers.Highly interdisciplinary, this journal appeals to scientists, researchers and professionals interested in nanoscience and nanotechnology, quantum materials and quantum technology, including the areas of physics, chemistry, biology, medicine, materials, energy/environment, information technology, detection science, healthcare and drug discovery, and electronics.