Electrically and Magnetically Readable Memory with Graphene/1T-CrTe2 Heterostructure: Anomalous Hall Transistor

Using first-principles theoretical analysis, we demonstrate spin-polarized anomalous Hall conductivity (AHC) response of 2D vdW heterostructure of graphene and ferromagnetic CrTe2 that can be con- trolled with perpendicular electric field E. The origins of AHC and linear magnetoelectric responses are traced to (a) transfer of electronic charge from graphene to ferromagnetic CrTe2 causing an out of plane electric polarization P = 1.69 µC/cm2 and (b) crystal field and spin-split Dirac points of graphene. Through H ′ = −V P.E coupling, E controls the charge transfer, magnetization and carrier density, switching the spin-polarized Berry curvature as Fermi energy crosses the split Dirac points of graphene. Based on these, we propose an Anomalous Hall Transistor (AHT) that exploits elec- tronic spin and charge to store binary information, opening up a route to quantum devices based on quantum geometry and magnetoelectric transport.