GLP-1/Notch RAM 结构域的突变会导致强烈的 Glp-1 表型。

microPublication biology Pub Date : 2024-11-07 eCollection Date: 2024-01-01 DOI:10.17912/micropub.biology.001391
Sarah L Crittenden, Stephany J Costa Dos Santos, Sindhu Battula, Judith Kimble
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引用次数: 0

摘要

远端顶端细胞龛利用GLP-1/Notch信号维持秀丽隐杆线虫生殖干细胞。RAM 结构域位于 GLP-1 /Notch 受体的胞内部分,是形成信号依赖性转录激活复合物不可或缺的部分。在此,我们报告了在带有 C 端 V5 标记的 GLP-1 /Notch 受体中产生的 GLP-1 RAM 结构域突变。gLP-1(RAM突变)V5同源突变体的表型与gLP-1无效突变体相似,但在gLP-1(RAM突变)V5杂合子中,GLP-1(RAM突变)V5蛋白的表达正常。我们的结论是,RAM 突变会削弱受体的活性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mutation of GLP-1/Notch RAM domain results in a strong Glp-1 phenotype.

The distal tip cell niche uses GLP-1 /Notch signaling to maintain C. elegans germline stem cells. The RAM domain, which resides within the intracellular portion of the GLP-1 /Notch receptor, is integral to formation of a signaling-dependent transcription activation complex. Here we report the generation of a mutation in the GLP-1 RAM domain, created in a GLP-1 /Notch receptor with a C-terminal V5 tag. The phenotype of glp-1 (RAM mut ) V5 homozygotes is similar to that of glp-1 null mutants, but expression of the GLP-1 (RAM mut ) V5 protein was normal in the glp-1 (RAM mut ) V5 heterozygotes. We conclude that the RAM mutation abolishes receptor activity.

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