Yuanhang Qu , Xiang Chen , Yan Liu , Shengxiang Wang , Xiyu Gu , Min Wei , Xiaoming Huang , Zesheng Liu , Jiaqi Ding , Zhiwei Wen , Yao Cai , Shishang Guo , Chengliang Sun
{"title":"实现高灵敏度温度传感器的新型 AlN/ScAlN 复合薄膜 SAW","authors":"Yuanhang Qu , Xiang Chen , Yan Liu , Shengxiang Wang , Xiyu Gu , Min Wei , Xiaoming Huang , Zesheng Liu , Jiaqi Ding , Zhiwei Wen , Yao Cai , Shishang Guo , Chengliang Sun","doi":"10.1016/j.sna.2024.116079","DOIUrl":null,"url":null,"abstract":"<div><div>Traditional SAW devices, typically made from piezoelectric materials like quartz and lithium niobate (LiNbO<sub>3</sub>), face significant challenges, such as incompatibility with CMOS processes and a decline in piezoelectric performance at high temperatures. Recently, aluminum nitride (AlN) and scandium-doped AlN (ScAlN) have gained attention as promising materials for high-performance SAW devices due to their high acoustic velocity, thermal stability, and CMOS compatibility. However, the low piezoelectric coefficient of AlN and Sc precipitation in ScAlN films limit their broader application. This study investigates the fabrication and optimization of SAW resonators using AlN/ScAlN composite films to enhance piezoelectric performance while mitigating Sc precipitation. A one-port SAW sensor device was designed based on the composite piezoelectric film, and structural optimization was performed by introducing groove structures to further reduce acoustic energy leakage and improve the quality factor (<em>Q</em>). Temperature sensing experiments were conducted using a peripheral oscillator circuit system. The experimental results demonstrated that the developed composite film SAW resonator exhibited excellent phase noise performance and thermal stability within the oscillator circuit, achieving a phase noise of −135.18 dBc/Hz@1 MHz and a frequency temperature coefficient of −31.07 ppm/°C. These findings confirm the potential of the AlN/ScAlN composite film as a reliable and precise temperature sensor.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"381 ","pages":"Article 116079"},"PeriodicalIF":4.1000,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel AlN/ScAlN composite film SAW for achieving highly sensitive temperature sensors\",\"authors\":\"Yuanhang Qu , Xiang Chen , Yan Liu , Shengxiang Wang , Xiyu Gu , Min Wei , Xiaoming Huang , Zesheng Liu , Jiaqi Ding , Zhiwei Wen , Yao Cai , Shishang Guo , Chengliang Sun\",\"doi\":\"10.1016/j.sna.2024.116079\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Traditional SAW devices, typically made from piezoelectric materials like quartz and lithium niobate (LiNbO<sub>3</sub>), face significant challenges, such as incompatibility with CMOS processes and a decline in piezoelectric performance at high temperatures. Recently, aluminum nitride (AlN) and scandium-doped AlN (ScAlN) have gained attention as promising materials for high-performance SAW devices due to their high acoustic velocity, thermal stability, and CMOS compatibility. However, the low piezoelectric coefficient of AlN and Sc precipitation in ScAlN films limit their broader application. This study investigates the fabrication and optimization of SAW resonators using AlN/ScAlN composite films to enhance piezoelectric performance while mitigating Sc precipitation. A one-port SAW sensor device was designed based on the composite piezoelectric film, and structural optimization was performed by introducing groove structures to further reduce acoustic energy leakage and improve the quality factor (<em>Q</em>). Temperature sensing experiments were conducted using a peripheral oscillator circuit system. The experimental results demonstrated that the developed composite film SAW resonator exhibited excellent phase noise performance and thermal stability within the oscillator circuit, achieving a phase noise of −135.18 dBc/Hz@1 MHz and a frequency temperature coefficient of −31.07 ppm/°C. These findings confirm the potential of the AlN/ScAlN composite film as a reliable and precise temperature sensor.</div></div>\",\"PeriodicalId\":21689,\"journal\":{\"name\":\"Sensors and Actuators A-physical\",\"volume\":\"381 \",\"pages\":\"Article 116079\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-11-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Sensors and Actuators A-physical\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0924424724010732\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424724010732","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Novel AlN/ScAlN composite film SAW for achieving highly sensitive temperature sensors
Traditional SAW devices, typically made from piezoelectric materials like quartz and lithium niobate (LiNbO3), face significant challenges, such as incompatibility with CMOS processes and a decline in piezoelectric performance at high temperatures. Recently, aluminum nitride (AlN) and scandium-doped AlN (ScAlN) have gained attention as promising materials for high-performance SAW devices due to their high acoustic velocity, thermal stability, and CMOS compatibility. However, the low piezoelectric coefficient of AlN and Sc precipitation in ScAlN films limit their broader application. This study investigates the fabrication and optimization of SAW resonators using AlN/ScAlN composite films to enhance piezoelectric performance while mitigating Sc precipitation. A one-port SAW sensor device was designed based on the composite piezoelectric film, and structural optimization was performed by introducing groove structures to further reduce acoustic energy leakage and improve the quality factor (Q). Temperature sensing experiments were conducted using a peripheral oscillator circuit system. The experimental results demonstrated that the developed composite film SAW resonator exhibited excellent phase noise performance and thermal stability within the oscillator circuit, achieving a phase noise of −135.18 dBc/Hz@1 MHz and a frequency temperature coefficient of −31.07 ppm/°C. These findings confirm the potential of the AlN/ScAlN composite film as a reliable and precise temperature sensor.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...