N.A. Mahadik , M. Dudley , B. Raghothamachar , Z. Chen , R.E. Stahlbush , M. Hinojosa , A. Lelis , W. Sung
{"title":"影响高功率 4H-SiC 器件的新型缺陷倍增机制","authors":"N.A. Mahadik , M. Dudley , B. Raghothamachar , Z. Chen , R.E. Stahlbush , M. Hinojosa , A. Lelis , W. Sung","doi":"10.1016/j.matdes.2024.113435","DOIUrl":null,"url":null,"abstract":"<div><div>Basal plane dislocations and stacking faults are critical defects influencing silicon carbide (SiC) based high power devices that are rapidly emerging to enable the future needs of electric vehicles, locomotives, renewables, and grid-scale applications. Microstructural properties of three novel interactions between basal plane dislocations and threading mixed dislocations (TMDs) are described. This leads to multiplication of Shockley stacking faults (SSFs) in SiC epitaxial layers. First is a mechanism of double interaction of two SSFs with TMDs that causes the SSFs to glide on multiple basal planes, and creation of locked partial dislocation dipoles (PDD) due to the attractive force between the opposite sign partial dislocations. Second type of interaction occurs between SSFs and a tilted TMD, that results in formation of another SSF. The third type of interaction causes further SSF multiplication by unlocking previously created PDDs. This occurs when the newly formed SSF intersects with the previously locked PDD, and unlocks it, leaving behind a freely gliding partial dislocation and formation of another SSF. Multiplication of SSFs can severely degrade reliability and performance of high power SiC devices by increasing reverse leakage current and on-state resistance, and could eventually lead to device failure.</div></div>","PeriodicalId":383,"journal":{"name":"Materials & Design","volume":"248 ","pages":"Article 113435"},"PeriodicalIF":7.6000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Mechanism of novel defect multiplication impacting high power 4H-SiC devices\",\"authors\":\"N.A. Mahadik , M. Dudley , B. Raghothamachar , Z. Chen , R.E. Stahlbush , M. Hinojosa , A. Lelis , W. Sung\",\"doi\":\"10.1016/j.matdes.2024.113435\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Basal plane dislocations and stacking faults are critical defects influencing silicon carbide (SiC) based high power devices that are rapidly emerging to enable the future needs of electric vehicles, locomotives, renewables, and grid-scale applications. Microstructural properties of three novel interactions between basal plane dislocations and threading mixed dislocations (TMDs) are described. This leads to multiplication of Shockley stacking faults (SSFs) in SiC epitaxial layers. First is a mechanism of double interaction of two SSFs with TMDs that causes the SSFs to glide on multiple basal planes, and creation of locked partial dislocation dipoles (PDD) due to the attractive force between the opposite sign partial dislocations. Second type of interaction occurs between SSFs and a tilted TMD, that results in formation of another SSF. The third type of interaction causes further SSF multiplication by unlocking previously created PDDs. This occurs when the newly formed SSF intersects with the previously locked PDD, and unlocks it, leaving behind a freely gliding partial dislocation and formation of another SSF. Multiplication of SSFs can severely degrade reliability and performance of high power SiC devices by increasing reverse leakage current and on-state resistance, and could eventually lead to device failure.</div></div>\",\"PeriodicalId\":383,\"journal\":{\"name\":\"Materials & Design\",\"volume\":\"248 \",\"pages\":\"Article 113435\"},\"PeriodicalIF\":7.6000,\"publicationDate\":\"2024-11-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials & Design\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0264127524008104\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials & Design","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0264127524008104","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Mechanism of novel defect multiplication impacting high power 4H-SiC devices
Basal plane dislocations and stacking faults are critical defects influencing silicon carbide (SiC) based high power devices that are rapidly emerging to enable the future needs of electric vehicles, locomotives, renewables, and grid-scale applications. Microstructural properties of three novel interactions between basal plane dislocations and threading mixed dislocations (TMDs) are described. This leads to multiplication of Shockley stacking faults (SSFs) in SiC epitaxial layers. First is a mechanism of double interaction of two SSFs with TMDs that causes the SSFs to glide on multiple basal planes, and creation of locked partial dislocation dipoles (PDD) due to the attractive force between the opposite sign partial dislocations. Second type of interaction occurs between SSFs and a tilted TMD, that results in formation of another SSF. The third type of interaction causes further SSF multiplication by unlocking previously created PDDs. This occurs when the newly formed SSF intersects with the previously locked PDD, and unlocks it, leaving behind a freely gliding partial dislocation and formation of another SSF. Multiplication of SSFs can severely degrade reliability and performance of high power SiC devices by increasing reverse leakage current and on-state resistance, and could eventually lead to device failure.
期刊介绍:
Materials and Design is a multi-disciplinary journal that publishes original research reports, review articles, and express communications. The journal focuses on studying the structure and properties of inorganic and organic materials, advancements in synthesis, processing, characterization, and testing, the design of materials and engineering systems, and their applications in technology. It aims to bring together various aspects of materials science, engineering, physics, and chemistry.
The journal explores themes ranging from materials to design and aims to reveal the connections between natural and artificial materials, as well as experiment and modeling. Manuscripts submitted to Materials and Design should contain elements of discovery and surprise, as they often contribute new insights into the architecture and function of matter.