Yukang Zhao , Jiangsen Su , Wenjing Zou , Youzhi Wu , Cairong Zhang , Ming Shao
{"title":"空穴传输层中混入的 MoO3 对基于 Alq3 的有机发光二极管性能的影响","authors":"Yukang Zhao , Jiangsen Su , Wenjing Zou , Youzhi Wu , Cairong Zhang , Ming Shao","doi":"10.1016/j.nxmate.2024.100426","DOIUrl":null,"url":null,"abstract":"<div><div>MoO<sub>3</sub> was introduced in a typical hole transporting material N,N’-diphenyl-N,N’-bis(1-naphthyl) (1,1’-biphenyl)-4,4’diamine (NPB) to improve the performance of tris-(8-hydroxyquinoline) aluminum (Alq<sub>3</sub>) based organic light emitting diodes (OLEDs). It is found that MoO<sub>3</sub> in NPB layer has a significant quenching effect on the electroluminescence of the device, although the current density-voltage characteristics of the devices is improved. At a current density of 20 mA/cm<sup>2</sup>, the driving voltage of the device with MoO<sub>3</sub>-blended NPB (50 wt%) is 5.83 V, which is 0.77 V lower than that (6.6 V) of the device without MoO<sub>3</sub>, while the brightness (54.3 cd/m<sup>2</sup>) or current efficiency (0.27 cd/A) of the former is one order of magnitude lower than that (735 cd/m<sup>2</sup> or 3.68 cd/A) of the latter. The formation of energy gap states by the charge transfer between MoO<sub>3</sub> and NPB or Alq<sub>3</sub> is used to explain the results.</div></div>","PeriodicalId":100958,"journal":{"name":"Next Materials","volume":"6 ","pages":"Article 100426"},"PeriodicalIF":0.0000,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of MoO3’s blend in hole transporting layer on the performance of Alq3-based OLEDs\",\"authors\":\"Yukang Zhao , Jiangsen Su , Wenjing Zou , Youzhi Wu , Cairong Zhang , Ming Shao\",\"doi\":\"10.1016/j.nxmate.2024.100426\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>MoO<sub>3</sub> was introduced in a typical hole transporting material N,N’-diphenyl-N,N’-bis(1-naphthyl) (1,1’-biphenyl)-4,4’diamine (NPB) to improve the performance of tris-(8-hydroxyquinoline) aluminum (Alq<sub>3</sub>) based organic light emitting diodes (OLEDs). It is found that MoO<sub>3</sub> in NPB layer has a significant quenching effect on the electroluminescence of the device, although the current density-voltage characteristics of the devices is improved. At a current density of 20 mA/cm<sup>2</sup>, the driving voltage of the device with MoO<sub>3</sub>-blended NPB (50 wt%) is 5.83 V, which is 0.77 V lower than that (6.6 V) of the device without MoO<sub>3</sub>, while the brightness (54.3 cd/m<sup>2</sup>) or current efficiency (0.27 cd/A) of the former is one order of magnitude lower than that (735 cd/m<sup>2</sup> or 3.68 cd/A) of the latter. The formation of energy gap states by the charge transfer between MoO<sub>3</sub> and NPB or Alq<sub>3</sub> is used to explain the results.</div></div>\",\"PeriodicalId\":100958,\"journal\":{\"name\":\"Next Materials\",\"volume\":\"6 \",\"pages\":\"Article 100426\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-11-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Next Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2949822824003241\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Next Materials","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2949822824003241","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of MoO3’s blend in hole transporting layer on the performance of Alq3-based OLEDs
MoO3 was introduced in a typical hole transporting material N,N’-diphenyl-N,N’-bis(1-naphthyl) (1,1’-biphenyl)-4,4’diamine (NPB) to improve the performance of tris-(8-hydroxyquinoline) aluminum (Alq3) based organic light emitting diodes (OLEDs). It is found that MoO3 in NPB layer has a significant quenching effect on the electroluminescence of the device, although the current density-voltage characteristics of the devices is improved. At a current density of 20 mA/cm2, the driving voltage of the device with MoO3-blended NPB (50 wt%) is 5.83 V, which is 0.77 V lower than that (6.6 V) of the device without MoO3, while the brightness (54.3 cd/m2) or current efficiency (0.27 cd/A) of the former is one order of magnitude lower than that (735 cd/m2 or 3.68 cd/A) of the latter. The formation of energy gap states by the charge transfer between MoO3 and NPB or Alq3 is used to explain the results.
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