Frequency and voltage dependent of electrical and dielectric properties of Ag/GO doped NiO/p-Si/Al MOS structures under darkness and light

At studying, we searched the frequency and voltage dependency of the electrical and dielectric traits of a nano-made NiO-contributed GO thin film enlarged on a p-type silicon substrate using sol-gel technique. The electrical and dielectric features of Ag/GO-NiO/p-Si were investigated by capacitance–voltage (C–V) and conductance–voltage (G/ $\omega$–V) indications in the frequency interval of 10 kHz–1000 kHz below dark and illumination at ambient temperature. While the capacitance and series resistance (Rs) values decrease with increment of frequency and increment trend in conductance was observed with the increasement of frequency. These decrement/increment trend observed at greater frequencies are attributed to existence of interface state densities. After, the frequency dependence of dielectric constant (εʼ), dielectric loss (εʼʼ), loss tangent (tanδ), ac electrical conductivity (σ_ac) and complex impedance (Z∗) of Ag/GO-NiO/p-Si structures were investigated in the frequency by means of the capacitance–voltage (C–V) and conductance-voltage (G/w-V) indications. The experimental findings showed that εʼ, εʼʼ and σ_ac were strongly frequency dependent.