利用湿粉工艺，通过钴辅助液相烧结，增强石墨基底上 TaC 涂层的致密性

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2024-11-20 DOI:10.1016/j.mseb.2024.117825

Zhao Zhang , Hongbin Pu , Hongwei Zhang , Mingyang Wang , Xuhao Lei , Haonan Tu

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引用次数: 0

摘要

本研究采用湿法粉末成型和烧结工艺，在石墨基底上制备了碳化钽（TaC）涂层，并添加了钴（Co）作为烧结助剂。研究了钴含量对 TaC 涂层的致密化、相组成、微观结构和机械性能的影响。少量钴的加入促进了涂层的致密化，并提高了其硬度和弹性模量。当 Co 含量为 1.5 wt% 时，涂层的相对密度约为 95.7%，硬度为 18.1 GPa，弹性模量为 395.0 GPa。形态分析揭示了涂层在高温烧结过程中的致密化机制。在 Co 液相的影响下，TaC 颗粒在液相中重新排列并发生溶解沉淀，最终实现了涂层的致密化。

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Enhanced densification of TaC coating on graphite substrate via cobalt-assisted liquid phase sintering using wet powder process

In this work, tantalum carbide (TaC) coatings were prepared on graphite substrates using a wet powder forming and sintering process with the addition of cobalt (Co) as a sintering aid. The effects of cobalt content on the densification, phase composition, microstructure, and mechanical properties of the TaC coatings were investigated. The addition of a small amount of Co promoted the densification of the coating and enhanced its hardness and elastic modulus. At a Co content of 1.5 wt%, the coating exhibited a relative density of approximately 95.7 %, a hardness of 18.1 GPa, and an elastic modulus of 395.0 GPa. Morphological analysis revealed the densification mechanism of the coating during the high-temperature sintering process. Under the influence of the Co liquid phase, TaC particles rearranged and underwent dissolution-precipitation in the liquid phase, ultimately achieving densification of the coating.

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.