阴离子钙化过渡金属二卤化物超导体 S0.66(2)WS₂ 的拓扑化学合成

IF 4.2 2区化学 Q2 CHEMISTRY, MULTIDISCIPLINARY

Chemical Communications Pub Date : 2024-11-22 DOI:10.1039/d4cc05514d

Ruijin Sun , Haodong Li , Duo Zhang , Zhaolong Liu , Yuxin Ma , Dezhong Meng , Changchun Zhao

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引用次数: 0

摘要

我们采用拓扑化学方法成功合成了 S0.66(2)WS₂的块状单晶，证实了硫在 M-WS₂ 层间空间的成功插层，从而诱导了空穴掺杂。这种材料具有超导性，转变温度为 6.5 K，是第一种阴离子掺杂/空穴掺杂的 TMD 材料。这种通过阴离子插层实现空穴掺杂的创新方法为其他 TMD 的应用提供了巨大潜力，可更好地控制其特性，并有可能发现新的量子现象。这项工作标志着在探索和调控基于 TMD 的材料方面向前迈出了一大步。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Topochemical synthesis of anion-intercalated transition metal dichalcogenide superconductor S0.66(2)WS2†

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Topochemical synthesis of anion-intercalated transition metal dichalcogenide superconductor S0.66(2)WS2†

We have successfully synthesized bulk single crystals of S_0.66(2)WS₂ using a topochemical method, confirming the successful intercalation of sulfur into the interlayer space of M-WS₂, which induces hole doping. The material exhibits superconductivity with a transition temperature of 6.5 K, making it the first anion-intercalated/hole-doped TMD material. This innovative approach to achieving hole doping through anion intercalation offers significant potential for application to other TMDs, enabling better control over their properties and potentially uncovering new quantum phenomena. This work marks a major step forward in the exploration and modulation of TMD-based materials.

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来源期刊

Chemical Communications 化学-化学综合

CiteScore

8.60

自引率

4.10%

发文量

2705

审稿时长

1.4 months

期刊介绍： ChemComm (Chemical Communications) is renowned as the fastest publisher of articles providing information on new avenues of research, drawn from all the world''s major areas of chemical research.