定制掺硫 g-C3N4 纳米结构的结构和光学特性,并通过控制碳含量最大限度地提高其光催化性能

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Abdullah S. Alshammari, Mansour Mohamed, Mohamed Bouzidi, Fahad Abdulaziz
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引用次数: 0

摘要

碳基材料是极具环境应用前景的材料。本研究通过不同条件下的硫脲热聚合制备了掺硫石墨氮化碳(S-g-C3N4)样品。通过改变煅烧温度和煅烧时间来控制制备样品中的碳含量,并研究其对样品特性的影响。XRD 研究证实了 g-C3N4 的形成,而 SEM 研究则监测了形貌随制备条件的变化。研究发现,改变制备温度会极大地影响 g-C3N4 纳米结构中的碳含量,进而影响其形态和光学特性,包括其带隙和光致发光特性。此外,改变煅烧时间也会改变样品的特性,但影响程度略低于煅烧温度。利用这些参数可以提高光催化性能,用于水处理应用。研究结果表明,结合各种制备条件的影响来设计掺杂 S 的 g-C3N4 样品的组成,可以有效地提高 g-C3N4 的特性及其在许多重要应用中的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Tailoring the structural and optical properties of sulphur doped g-C3N4 nanostructures and maximizing their photocatalytic performance via controlling carbon content

Carbon based materials are highly promising materials for environmental applications. In the current study, sulphur doped graphite like carbon nitride (S-g-C3N4) samples were prepared through thermal polymerization of thiourea at different conditions. The carbon content in the prepared samples was controlled by varying the calcination temperature and calcination time and its effect on the properties of the samples was investigated. The XRD studies confirmed the formation of g-C3N4 while the SEM investigations were performed to monitor the morphology transformation as a function of the preparation conditions. Changing the preparation temperature was found to strongly impact the carbon content in the g-C3N4 nanostructures and consequently their morphological and optical properties including their band gap and photoluminescence characteristics. Additionally, varying the calcination time was found to play a role in modifying the properties of the samples but with slightly less effect than that of the calcination temperature. These parameters were utilized to enhance the photocatalytic performance for water treatment applications. The findings of the study show that engineering the composition of S doped g-C3N4 samples by combining the effects of various preparation conditions could be effectively utilized to enhance the properties of g-C3N4 and its performance in many vital applications.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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