Yu Jiang, Yijun Zhang, Zehao Tong, Song Tang, Tao Guo, Yunsheng Qian, Jianning Sun, Lin Ren, Muchun Jin, Feng Shi, Hongchang Cheng, Yugang Zeng
{"title":"具有指数掺杂结构的反射型砷化镓光电阴极的量子效率提升,可产生有利的内置电场。","authors":"Yu Jiang, Yijun Zhang, Zehao Tong, Song Tang, Tao Guo, Yunsheng Qian, Jianning Sun, Lin Ren, Muchun Jin, Feng Shi, Hongchang Cheng, Yugang Zeng","doi":"10.1364/OE.537424","DOIUrl":null,"url":null,"abstract":"<p><p>The rapid development of GaAs photocathodes has led to an increased focus on the attainment of high quantum efficiency. Three types of exponential-doping structures with a high to low doping concentration distribution from the interior to the surface are proposed for reflective GaAs emission layers. These three structures generate different built-in electric fields that facilitate photoelectron emission. The one-dimensional continuity equations for the increasing, constant, and decreasing types of built-in electric fields are derived, respectively. The electron concentration distribution and quantum efficiency varying with the wavelength are solved numerically by the finite difference method. The simulation results indicate that the quantum efficiency of the GaAs photocathode with the increasing type of built-in electric field is superior to that with the constant built-in electric field, while the GaAs photocathode with the decreasing type of built-in electric field shows the worst performance. Then, the designed GaAs photocathodes with the increasing and constant types of built-in electric fields are grown by metal-organic chemical vapor deposition and activated by cesium-oxygen alternating deposition. The measured spectral response curves show that the quantum efficiency of the GaAs photocathode with the increasing type of built-in electric field is higher in the whole band than that with the constant type of built-in electric field. In addition, the exponential-doping structure generating the increasing type of built-in electric field is beneficial for improving the surface potential barrier and increasing the surface electron escape probability.</p>","PeriodicalId":19691,"journal":{"name":"Optics express","volume":"32 23","pages":"41925-41935"},"PeriodicalIF":3.2000,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quantum efficiency enhancement of reflective GaAs photocathodes with exponential-doping structure generating a favorable built-in electric field.\",\"authors\":\"Yu Jiang, Yijun Zhang, Zehao Tong, Song Tang, Tao Guo, Yunsheng Qian, Jianning Sun, Lin Ren, Muchun Jin, Feng Shi, Hongchang Cheng, Yugang Zeng\",\"doi\":\"10.1364/OE.537424\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>The rapid development of GaAs photocathodes has led to an increased focus on the attainment of high quantum efficiency. Three types of exponential-doping structures with a high to low doping concentration distribution from the interior to the surface are proposed for reflective GaAs emission layers. These three structures generate different built-in electric fields that facilitate photoelectron emission. The one-dimensional continuity equations for the increasing, constant, and decreasing types of built-in electric fields are derived, respectively. The electron concentration distribution and quantum efficiency varying with the wavelength are solved numerically by the finite difference method. The simulation results indicate that the quantum efficiency of the GaAs photocathode with the increasing type of built-in electric field is superior to that with the constant built-in electric field, while the GaAs photocathode with the decreasing type of built-in electric field shows the worst performance. Then, the designed GaAs photocathodes with the increasing and constant types of built-in electric fields are grown by metal-organic chemical vapor deposition and activated by cesium-oxygen alternating deposition. The measured spectral response curves show that the quantum efficiency of the GaAs photocathode with the increasing type of built-in electric field is higher in the whole band than that with the constant type of built-in electric field. In addition, the exponential-doping structure generating the increasing type of built-in electric field is beneficial for improving the surface potential barrier and increasing the surface electron escape probability.</p>\",\"PeriodicalId\":19691,\"journal\":{\"name\":\"Optics express\",\"volume\":\"32 23\",\"pages\":\"41925-41935\"},\"PeriodicalIF\":3.2000,\"publicationDate\":\"2024-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optics express\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1364/OE.537424\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics express","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1364/OE.537424","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}
Quantum efficiency enhancement of reflective GaAs photocathodes with exponential-doping structure generating a favorable built-in electric field.
The rapid development of GaAs photocathodes has led to an increased focus on the attainment of high quantum efficiency. Three types of exponential-doping structures with a high to low doping concentration distribution from the interior to the surface are proposed for reflective GaAs emission layers. These three structures generate different built-in electric fields that facilitate photoelectron emission. The one-dimensional continuity equations for the increasing, constant, and decreasing types of built-in electric fields are derived, respectively. The electron concentration distribution and quantum efficiency varying with the wavelength are solved numerically by the finite difference method. The simulation results indicate that the quantum efficiency of the GaAs photocathode with the increasing type of built-in electric field is superior to that with the constant built-in electric field, while the GaAs photocathode with the decreasing type of built-in electric field shows the worst performance. Then, the designed GaAs photocathodes with the increasing and constant types of built-in electric fields are grown by metal-organic chemical vapor deposition and activated by cesium-oxygen alternating deposition. The measured spectral response curves show that the quantum efficiency of the GaAs photocathode with the increasing type of built-in electric field is higher in the whole band than that with the constant type of built-in electric field. In addition, the exponential-doping structure generating the increasing type of built-in electric field is beneficial for improving the surface potential barrier and increasing the surface electron escape probability.
期刊介绍:
Optics Express is the all-electronic, open access journal for optics providing rapid publication for peer-reviewed articles that emphasize scientific and technology innovations in all aspects of optics and photonics.