使用紧凑型单端口 CRLH 传输线谐调的 2-GHz GaN HEMT 功率放大器

IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Shinichi Tanaka, Ryota Mogami, Naoki Iisaka, Kazuhiko Honjo, Ryo Ishikawa
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引用次数: 0

摘要

本文介绍了一种使用左右手(CRLH)复合传输线(TL)的紧凑型谐波调谐网络(HTN)。CRLH TL 具有纯虚构的谐波负载阻抗,因为谐波陷波滤波器使其在谐波频率下基本上发挥了单端口电路的功能。与基于微带线 (MSL) 或混合 MSL 和 CRLH TL 技术的传统 HTN 相比,所提出的 HTN 具有显著的紧凑性,同时可适应各种工作类别的放大器。作为概念验证,我们制作了一个 2-GHz 10 瓦氮化镓(GaN)高电子迁移率晶体管(HEMT)功率放大器(PA),其漏极效率达到 84.6%,功率附加效率(PAE)达到 78.4%。这种新型 HTN 可望应用于发射机系统的功率放大器,在这种系统中,高效率和最小的电路占用空间至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

A 2-GHz GaN HEMT Power Amplifier Harmonically Tuned Using a Compact One-Port CRLH Transmission Line

A 2-GHz GaN HEMT Power Amplifier Harmonically Tuned Using a Compact One-Port CRLH Transmission Line

A compact harmonic tuning network (HTN) using a composite right-/left-handed (CRLH) transmission line (TL) is introduced. The CRLH TL offers purely imaginary harmonic load impedances, as it essentially functions as a one-port circuit at the harmonic frequencies, owing to a harmonics trap filter. In comparison to conventional HTNs based on microstrip line (MSL) or hybrid MSL and CRLH TL technologies, the proposed HTN features remarkable compactness while accommodating various operating classes of amplifiers. As a proof of concept, a 2-GHz 10-W gallium nitride (GaN) high electron mobility transistor (HEMT) power amplifier (PA) was fabricated, demonstrating drain efficiency of 84.6% and power added efficiency (PAE) of 78.4%. The novel HTN is expected to find applications in PAs for transmitter systems, where high efficiency and a minimal circuit footprint are of paramount importance.

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来源期刊
Iet Circuits Devices & Systems
Iet Circuits Devices & Systems 工程技术-工程:电子与电气
CiteScore
3.80
自引率
7.70%
发文量
32
审稿时长
3 months
期刊介绍: IET Circuits, Devices & Systems covers the following topics: Circuit theory and design, circuit analysis and simulation, computer aided design Filters (analogue and switched capacitor) Circuit implementations, cells and architectures for integration including VLSI Testability, fault tolerant design, minimisation of circuits and CAD for VLSI Novel or improved electronic devices for both traditional and emerging technologies including nanoelectronics and MEMs Device and process characterisation, device parameter extraction schemes Mathematics of circuits and systems theory Test and measurement techniques involving electronic circuits, circuits for industrial applications, sensors and transducers
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