Investigation of the Phonon Interaction Influence on the Irreversible Energy Dissipation During Interfacial Energy Transfer

With the enhancement of integration and functionality of high-power electronic devices, heat dissipation has become a critical bottleneck limiting performance improvement. In particular, under high power density conditions, interface thermal resistance has emerged as a prominent factor in overall thermal management. In this paper, the interfacial energy transport characteristics of Si/Ge is investigated based on the Boltzmann Transport Equation (BTE). The quality of interfacial energy transport is analyzed using Boltzmann statistical entropy and the losses that occur at the interface during energy transmission is also explored. The results indicate that the mismatch and high degree of localization of interface phonons increase the irreversible loss of energy phonons during transport across the interface, which leads to a significant entropy increase at the interface. Furthermore, the degree of irreversibility in energy loss is related to the thermal transport pathway; the lower the phonon matching at the interface, the greater the thermal transport resistance and the larger the irreversible loss. This research offers a comprehensive analysis of the irreversibility of energy loss, providing novel theoretical frameworks and research avenues for enhancing energy efficiency in high-power electronic devices.