Ahmad Ayyaz, G. Murtaza, Huda Alkhaldi, Haya Alhummiany, Akhlaq Ahmed, Hisham S. M. Abd-Rabboh, Q. Mahmood, M. S. Al-Buriahi, H. Elhosiny Ali
{"title":"掺 La 的 BaZrO3 的结构、形态、介电和光电特性研究:实验和 DFT 分析","authors":"Ahmad Ayyaz, G. Murtaza, Huda Alkhaldi, Haya Alhummiany, Akhlaq Ahmed, Hisham S. M. Abd-Rabboh, Q. Mahmood, M. S. Al-Buriahi, H. Elhosiny Ali","doi":"10.1007/s10854-024-13878-6","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, Ba<sub>1-x</sub>La<sub>x</sub>ZrO<sub>3</sub> (<i>x</i> = 0, 0.04, 0.08, 0.12, 0.16) samples were prepared using a solid-state reaction method. The analysis of XRD patterns ensured the cubic structures with space group Pm3m and lattice parameters by Rietveld refinement. The density functional theory (DFT) has been employed to study the electronic band structure and density of states. The field emission scanning electron microscope (FESEM) is used to investigate the surface morphology of studied samples and calculate the average grain size in the 0.2 to 0.8 µm range. Fourier transform infrared (FTIR) spectroscopy observes the existence of functional bonding in all samples. The dielectric and impedance measurements have been carried out using electrochemical impedance spectroscopy (EIS) in the high-frequency region. The electronic and optical of pure BaZrO<sub>3</sub> and Ba<sub>1-x</sub>La<sub>x</sub>ZrO<sub>3</sub> (<i>x</i> = 0.12) are computed by density functional theory (DFT) calculations. The BaZrO<sub>3</sub> has an indirect band gap of 3.52 eV, whereas Ba<sub>1-x</sub>La<sub>x</sub>ZrO<sub>3</sub> (<i>x</i> = 0.12) reveals a direct band gap of 3.36 eV. The band gap transitions from an indirect to a direct band gap with La-doping. The optical characteristics, such as dielectric constants, absorption coefficient, reflection, refractive index, optical conductivity, and optical loss, are investigated, and Ba<sub>1-x</sub>La<sub>x</sub>ZrO<sub>3</sub> (<i>x</i> = 0.12) responds optically well to the ultraviolet range. This analysis suggests that Ba<sub>1-x</sub>La<sub>x</sub>ZrO<sub>3</sub> is a suitable candidate for UV-based photovoltaics and photodetectors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of structure, morphology, dielectric, and optoelectronic properties of La-doped BaZrO3: experimental and DFT analysis\",\"authors\":\"Ahmad Ayyaz, G. Murtaza, Huda Alkhaldi, Haya Alhummiany, Akhlaq Ahmed, Hisham S. M. Abd-Rabboh, Q. Mahmood, M. S. Al-Buriahi, H. Elhosiny Ali\",\"doi\":\"10.1007/s10854-024-13878-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this work, Ba<sub>1-x</sub>La<sub>x</sub>ZrO<sub>3</sub> (<i>x</i> = 0, 0.04, 0.08, 0.12, 0.16) samples were prepared using a solid-state reaction method. The analysis of XRD patterns ensured the cubic structures with space group Pm3m and lattice parameters by Rietveld refinement. The density functional theory (DFT) has been employed to study the electronic band structure and density of states. The field emission scanning electron microscope (FESEM) is used to investigate the surface morphology of studied samples and calculate the average grain size in the 0.2 to 0.8 µm range. Fourier transform infrared (FTIR) spectroscopy observes the existence of functional bonding in all samples. The dielectric and impedance measurements have been carried out using electrochemical impedance spectroscopy (EIS) in the high-frequency region. The electronic and optical of pure BaZrO<sub>3</sub> and Ba<sub>1-x</sub>La<sub>x</sub>ZrO<sub>3</sub> (<i>x</i> = 0.12) are computed by density functional theory (DFT) calculations. The BaZrO<sub>3</sub> has an indirect band gap of 3.52 eV, whereas Ba<sub>1-x</sub>La<sub>x</sub>ZrO<sub>3</sub> (<i>x</i> = 0.12) reveals a direct band gap of 3.36 eV. The band gap transitions from an indirect to a direct band gap with La-doping. The optical characteristics, such as dielectric constants, absorption coefficient, reflection, refractive index, optical conductivity, and optical loss, are investigated, and Ba<sub>1-x</sub>La<sub>x</sub>ZrO<sub>3</sub> (<i>x</i> = 0.12) responds optically well to the ultraviolet range. This analysis suggests that Ba<sub>1-x</sub>La<sub>x</sub>ZrO<sub>3</sub> is a suitable candidate for UV-based photovoltaics and photodetectors.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 33\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13878-6\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13878-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Investigation of structure, morphology, dielectric, and optoelectronic properties of La-doped BaZrO3: experimental and DFT analysis
In this work, Ba1-xLaxZrO3 (x = 0, 0.04, 0.08, 0.12, 0.16) samples were prepared using a solid-state reaction method. The analysis of XRD patterns ensured the cubic structures with space group Pm3m and lattice parameters by Rietveld refinement. The density functional theory (DFT) has been employed to study the electronic band structure and density of states. The field emission scanning electron microscope (FESEM) is used to investigate the surface morphology of studied samples and calculate the average grain size in the 0.2 to 0.8 µm range. Fourier transform infrared (FTIR) spectroscopy observes the existence of functional bonding in all samples. The dielectric and impedance measurements have been carried out using electrochemical impedance spectroscopy (EIS) in the high-frequency region. The electronic and optical of pure BaZrO3 and Ba1-xLaxZrO3 (x = 0.12) are computed by density functional theory (DFT) calculations. The BaZrO3 has an indirect band gap of 3.52 eV, whereas Ba1-xLaxZrO3 (x = 0.12) reveals a direct band gap of 3.36 eV. The band gap transitions from an indirect to a direct band gap with La-doping. The optical characteristics, such as dielectric constants, absorption coefficient, reflection, refractive index, optical conductivity, and optical loss, are investigated, and Ba1-xLaxZrO3 (x = 0.12) responds optically well to the ultraviolet range. This analysis suggests that Ba1-xLaxZrO3 is a suitable candidate for UV-based photovoltaics and photodetectors.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.