{"title":"基于全无机无铅过氧化物 Cs2SnI6 的宽带光电探测器,用于光学加密数据通信","authors":"Manoj Kumar, Aditya Yadav, Govind Gupta, Sushil Kumar","doi":"10.1007/s10854-024-13872-y","DOIUrl":null,"url":null,"abstract":"<div><p>Metal halide perovskites have immense potential to revolutionize the semiconducting material horizon. However, most of the prominent perovskite materials face the issue of lead toxicity and air-ambient stability. One of the prominent alternates to Lead (Pb) is Tin (Sn), whereas Sn-based double perovskite (Cs<sub>2</sub>SnI<sub>6</sub>) is air stable. A one-step process is adopted for the synthesis of Cs<sub>2</sub>SnI<sub>6</sub>. XRD results confirms the synthesis of Cs<sub>2</sub>SnI<sub>6</sub> with significant diffraction peak corresponds to (222) plane. Also, Spin-coated thin film shows same phase of Cs<sub>2</sub>SnI<sub>6</sub> as powder material. Stability of the thin film analysed by XRD, which infers that the thin film is for 7 days and after 30 days. Furthermore, the vibrational properties of the Cs<sub>2</sub>SnI<sub>6</sub> thin film are characterised by Raman spectroscopy. Raman spectra confirm the Cs<sub>2</sub>SnI<sub>6</sub> double perovskite as its <i>A</i><sub>1g</sub>, <i>E</i><sub>g</sub> and <i>F</i><sub>2g</sub> are Sn–I symmetric stretching, Sn–I asymmetric stretching and I–Sn–I asymmetric bending inside the [SnI<sub>6</sub>]<sup>2−</sup> octahedral are observed, respectively. From SEM micrograph, the average grain size of 362 nm with FWHM 268 nm is evaluated for the as deposited thin film. Also, Cs<sub>2</sub>SnI<sub>6</sub> thin films are incorporated for Cs<sub>2</sub>SnI<sub>6</sub>/Si heterojunction diode and its <i>I</i>–<i>V</i> characteristics are analysed. Also, photodetector (PD) is fabricated with Ag/Cs<sub>2</sub>SnI<sub>6</sub>/Ag device configuration. Photodetection measurements exhibits that fabricated PD device can operate as broadband PD. The characteristic parameters of the fabricated PD are evaluated. Distinguishable current states under the illumination of UV, Vis, and NIR spectra offer the potential applications of PD as data decryption device in optically encrypted data communication.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"All inorganic lead-free perovskite Cs2SnI6-based broadband photodetector for optically encrypted data communication\",\"authors\":\"Manoj Kumar, Aditya Yadav, Govind Gupta, Sushil Kumar\",\"doi\":\"10.1007/s10854-024-13872-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Metal halide perovskites have immense potential to revolutionize the semiconducting material horizon. However, most of the prominent perovskite materials face the issue of lead toxicity and air-ambient stability. One of the prominent alternates to Lead (Pb) is Tin (Sn), whereas Sn-based double perovskite (Cs<sub>2</sub>SnI<sub>6</sub>) is air stable. A one-step process is adopted for the synthesis of Cs<sub>2</sub>SnI<sub>6</sub>. XRD results confirms the synthesis of Cs<sub>2</sub>SnI<sub>6</sub> with significant diffraction peak corresponds to (222) plane. Also, Spin-coated thin film shows same phase of Cs<sub>2</sub>SnI<sub>6</sub> as powder material. Stability of the thin film analysed by XRD, which infers that the thin film is for 7 days and after 30 days. Furthermore, the vibrational properties of the Cs<sub>2</sub>SnI<sub>6</sub> thin film are characterised by Raman spectroscopy. Raman spectra confirm the Cs<sub>2</sub>SnI<sub>6</sub> double perovskite as its <i>A</i><sub>1g</sub>, <i>E</i><sub>g</sub> and <i>F</i><sub>2g</sub> are Sn–I symmetric stretching, Sn–I asymmetric stretching and I–Sn–I asymmetric bending inside the [SnI<sub>6</sub>]<sup>2−</sup> octahedral are observed, respectively. From SEM micrograph, the average grain size of 362 nm with FWHM 268 nm is evaluated for the as deposited thin film. Also, Cs<sub>2</sub>SnI<sub>6</sub> thin films are incorporated for Cs<sub>2</sub>SnI<sub>6</sub>/Si heterojunction diode and its <i>I</i>–<i>V</i> characteristics are analysed. Also, photodetector (PD) is fabricated with Ag/Cs<sub>2</sub>SnI<sub>6</sub>/Ag device configuration. Photodetection measurements exhibits that fabricated PD device can operate as broadband PD. The characteristic parameters of the fabricated PD are evaluated. Distinguishable current states under the illumination of UV, Vis, and NIR spectra offer the potential applications of PD as data decryption device in optically encrypted data communication.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 33\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13872-y\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13872-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
All inorganic lead-free perovskite Cs2SnI6-based broadband photodetector for optically encrypted data communication
Metal halide perovskites have immense potential to revolutionize the semiconducting material horizon. However, most of the prominent perovskite materials face the issue of lead toxicity and air-ambient stability. One of the prominent alternates to Lead (Pb) is Tin (Sn), whereas Sn-based double perovskite (Cs2SnI6) is air stable. A one-step process is adopted for the synthesis of Cs2SnI6. XRD results confirms the synthesis of Cs2SnI6 with significant diffraction peak corresponds to (222) plane. Also, Spin-coated thin film shows same phase of Cs2SnI6 as powder material. Stability of the thin film analysed by XRD, which infers that the thin film is for 7 days and after 30 days. Furthermore, the vibrational properties of the Cs2SnI6 thin film are characterised by Raman spectroscopy. Raman spectra confirm the Cs2SnI6 double perovskite as its A1g, Eg and F2g are Sn–I symmetric stretching, Sn–I asymmetric stretching and I–Sn–I asymmetric bending inside the [SnI6]2− octahedral are observed, respectively. From SEM micrograph, the average grain size of 362 nm with FWHM 268 nm is evaluated for the as deposited thin film. Also, Cs2SnI6 thin films are incorporated for Cs2SnI6/Si heterojunction diode and its I–V characteristics are analysed. Also, photodetector (PD) is fabricated with Ag/Cs2SnI6/Ag device configuration. Photodetection measurements exhibits that fabricated PD device can operate as broadband PD. The characteristic parameters of the fabricated PD are evaluated. Distinguishable current states under the illumination of UV, Vis, and NIR spectra offer the potential applications of PD as data decryption device in optically encrypted data communication.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.