各种方法合成的 BiYWO6: Eu3+ 磷光体的热、结构和发光特性的综合研究

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Indrajeet Maurya, M. Jayasimhadri
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引用次数: 0

摘要

通过固态反应法(SSR)、溶胶-凝胶燃烧法(SGC)、共沉淀法(CP)和水热法(HT)等四种不同的合成技术合成了铕激活的钨酸铋(BYW:Eu3+)荧光粉。为了优化 BYW:Eu3+ 磷的合成工艺,我们进行了热学、结构、形态和发光特性等相关研究。TGA-DSC 曲线显示了加热过程中的内热/放热峰和相应的重量损失。X 射线衍射分析和 Rietveld 精炼被用来确定未掺杂和掺杂 BiYWO6 样品的相和晶体结构。利用能量色散 X 射线的场发射扫描电子显微镜观察了合成的 BYW:Eu3+ 磷的形态和成分行为。发光光谱曲线表明,蓝色区域(λex = 465 nm)有强吸收,红色区域(λem = 613 nm)有强发射,这归因于 5D0 → 7F2 转变。比较光致发光(PL)结果表明,与其他方法(SGC、SSR 和 HT)合成的荧光粉相比,在煅烧温度为 900 ℃ 时用 CP 方法合成的荧光粉的发射强度最高,尤其是比用 SSR 方法合成的荧光粉高出两倍。此外,随着 Eu3+ 离子活化剂浓度的增加,荧光强度也会增强,最高可达 20 摩尔%。计算得出的掺杂了 20.0 mol% Eu3+ 的 BYW 样品的 CIE 色度坐标(0.654,0.345)位于红色区域,与市售的红色发光荧光粉 Y2O3:Eu3+ (0.645,0.347)和 Y2O2S:Eu3+ (0.647,0.343)相当。合成荧光粉的平均聚光衰减时间在微秒范围内。这些结果表明,用 CP 方法合成的 Eu3+ 离子活化 BiYWO6 荧光粉具有独特的光致发光特性和良好的形貌,可用作光电子器件中的强红色发光元件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comprehensive study on thermal, structural, and luminescent properties of BiYWO6: Eu3+ phosphors synthesized by various methods

Europium-activated bismuth yttrium tungstate (BYW: Eu3+) phosphors were synthesized by four various synthesis techniques such as solid-state reaction (SSR), sol–gel combustion (SGC), co-precipitation (CP), and hydrothermal (HT) methods. Relative investigations such as thermal, structural, morphological, and luminescence characterizations have been carried out to optimize the synthesis process of BYW:Eu3+phosphor. The TGA–DSC curves signify the endothermic/exothermic peaks and corresponding weight loss during heating. X-ray diffraction analysis and Rietveld refinement have been used to identify the phase and crystal structure of the undoped and doped BiYWO6 sample. The field emission scanning electron microscope with energy-dispersive X-ray was carried out to examine the morphological and compositional behavior of the synthesized BYW: Eu3+phosphor. The luminescent spectral profiles indicate the strong absorption in the blue region (λex = 465 nm) and intense emission in the red region (λem = 613 nm) ascribed to the 5D0 → 7F2 transition. The compared photoluminescence (PL) results signify that the phosphor synthesized by the CP method at calcination temperature 900 °C exhibits the strongest emission than the phosphor synthesized via other methods (SGC, SSR, and HT) and is especially two times higher than the phosphor synthesized by the SSR method. Further, the PL intensity enhanced with increasing activator concentration of Eu3+ ions up to 20 mol%. The calculated CIE chromaticity coordinates (0.654, 0.345) of 20.0 mol% Eu3+-doped BYW sample were situated in the red region, which is comparable with the commercially available red-emitting phosphors Y2O3:Eu3+ (0.645, 0.347) and Y2O2S:Eu3+ (0.647, 0.343). The average PL decay time of the synthesized phosphor was in the microseconds range. The obtained results suggest that the BiYWO6 activated with Eu3+ ions phosphor synthesized by the CP method has distinctive PL characteristics with good morphology, which can be employed as an intense red-emitting component in photonics devices.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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