针对 5G n258 应用、采用混合匹配技术的硅基氮化镓毫米波低噪声放大器

IF 1 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Microwave and Optical Technology Letters Pub Date : 2024-11-15 DOI:10.1002/mop.70031

Liang Lan, Zhihao Zhang, Chaoyu Huang, Gary Zhang

{"title":"针对 5G n258 应用、采用混合匹配技术的硅基氮化镓毫米波低噪声放大器","authors":"Liang Lan, Zhihao Zhang, Chaoyu Huang, Gary Zhang","doi":"10.1002/mop.70031","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>This letter details the design and implementation of a millimeter-wave (mm-Wave) low noise amplifier (LNA) employing 150-nm gallium nitride on silicon carbide (GaN-on-SiC) high electron mobility transistor technology, specifically tailored for fifth-generation (5G) applications. The proposed GaN-based LNA integrates a hybrid matching topology alongside a co-design strategy, thereby optimizing the noise figure (NF) by minimizing interstage matching components. The fabricated LNA, spanning a total chip area of 2.3 × 1.4 mm², exhibits a linear gain in the range of 17.41–19.2 dB and maintains an NF within 2.32–3.06 dB. Additionally, commendable input/output return losses exceeding 7.5 dB are achieved across the 23–27.5 GHz, with the apparatus consuming approximately 150 mW.</p>\n </div>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 11","pages":""},"PeriodicalIF":1.0000,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A GaN-on-SiC Millimeter-Wave Low Noise Amplifier Using Hybrid-Matching Technique for 5G n258 Applications\",\"authors\":\"Liang Lan, Zhihao Zhang, Chaoyu Huang, Gary Zhang\",\"doi\":\"10.1002/mop.70031\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n <p>This letter details the design and implementation of a millimeter-wave (mm-Wave) low noise amplifier (LNA) employing 150-nm gallium nitride on silicon carbide (GaN-on-SiC) high electron mobility transistor technology, specifically tailored for fifth-generation (5G) applications. The proposed GaN-based LNA integrates a hybrid matching topology alongside a co-design strategy, thereby optimizing the noise figure (NF) by minimizing interstage matching components. The fabricated LNA, spanning a total chip area of 2.3 × 1.4 mm², exhibits a linear gain in the range of 17.41–19.2 dB and maintains an NF within 2.32–3.06 dB. Additionally, commendable input/output return losses exceeding 7.5 dB are achieved across the 23–27.5 GHz, with the apparatus consuming approximately 150 mW.</p>\\n </div>\",\"PeriodicalId\":18562,\"journal\":{\"name\":\"Microwave and Optical Technology Letters\",\"volume\":\"66 11\",\"pages\":\"\"},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2024-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Optical Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/mop.70031\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Optical Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/mop.70031","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

这封信详细介绍了采用 150 纳米碳化硅氮化镓（GaN-on-SiC）高电子迁移率晶体管技术的毫米波（mm-Wave）低噪声放大器（LNA）的设计与实现，该放大器是专门为第五代（5G）应用量身定制的。所提出的基于氮化镓的低噪声放大器集成了混合匹配拓扑和协同设计策略，从而通过最大限度地减少级间匹配元件来优化噪声系数（NF）。制造出的 LNA 芯片总面积为 2.3 × 1.4 mm²，线性增益范围为 17.41-19.2 dB，NF 保持在 2.32-3.06 dB 之间。此外，在 23-27.5 GHz 范围内，输入/输出回波损耗超过 7.5 dB，功耗约为 150 mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A GaN-on-SiC Millimeter-Wave Low Noise Amplifier Using Hybrid-Matching Technique for 5G n258 Applications

This letter details the design and implementation of a millimeter-wave (mm-Wave) low noise amplifier (LNA) employing 150-nm gallium nitride on silicon carbide (GaN-on-SiC) high electron mobility transistor technology, specifically tailored for fifth-generation (5G) applications. The proposed GaN-based LNA integrates a hybrid matching topology alongside a co-design strategy, thereby optimizing the noise figure (NF) by minimizing interstage matching components. The fabricated LNA, spanning a total chip area of 2.3 × 1.4 mm², exhibits a linear gain in the range of 17.41–19.2 dB and maintains an NF within 2.32–3.06 dB. Additionally, commendable input/output return losses exceeding 7.5 dB are achieved across the 23–27.5 GHz, with the apparatus consuming approximately 150 mW.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Microwave and Optical Technology Letters 工程技术-工程：电子与电气

CiteScore

3.40

自引率

20.00%

发文量

371

审稿时长

4.3 months

期刊介绍： Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas. - RF, Microwave, and Millimeter Waves - Antennas and Propagation - Submillimeter-Wave and Infrared Technology - Optical Engineering All papers are subject to peer review before publication