基于通用神经网络的全栅极和平面场效应晶体管静态性能预测模型构建技术

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Jing Chen , Jiahao Wu , Wei Du , Qing Yao , Kemeng Yang , Jun Zhang , Jiafei Yao , Yufeng Guo
{"title":"基于通用神经网络的全栅极和平面场效应晶体管静态性能预测模型构建技术","authors":"Jing Chen ,&nbsp;Jiahao Wu ,&nbsp;Wei Du ,&nbsp;Qing Yao ,&nbsp;Kemeng Yang ,&nbsp;Jun Zhang ,&nbsp;Jiafei Yao ,&nbsp;Yufeng Guo","doi":"10.1016/j.mejo.2024.106485","DOIUrl":null,"url":null,"abstract":"<div><div>—This paper proposes general neural network-based static performance prediction model construction techniques for gate-all-around (GAA) and planar field effect transistor (FET). Firstly, a unique data preprocessing method named quasi-linear transformation is proposed to improve the prediction accuracy. By introducing transformation functions to process the input, the relationship between the input and output is simplified, thereby facilitating the model training. Secondly, an improved weighted loss function scheme that considers a more comprehensive evaluation criterion to enhance the training process is proposed. Compared with traditional artificial neural networks, the average prediction error of the output and transfer curves is reduced by 33 % and 25 % for GAA and planar FET, respectively. Meanwhile, the proposed model demonstrates strong extrapolation ability. Moreover, compared to traditional methods of obtaining static characteristic curves, this method is more efficient. Furthermore. the proposed neural network-based static performance prediction model is converted to Verilog-A model, demonstrating potential in circuit simulation.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"154 ","pages":"Article 106485"},"PeriodicalIF":1.9000,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"General neural network-based static performance prediction model construction techniques for gate-all-around and planar field effect transistor\",\"authors\":\"Jing Chen ,&nbsp;Jiahao Wu ,&nbsp;Wei Du ,&nbsp;Qing Yao ,&nbsp;Kemeng Yang ,&nbsp;Jun Zhang ,&nbsp;Jiafei Yao ,&nbsp;Yufeng Guo\",\"doi\":\"10.1016/j.mejo.2024.106485\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>—This paper proposes general neural network-based static performance prediction model construction techniques for gate-all-around (GAA) and planar field effect transistor (FET). Firstly, a unique data preprocessing method named quasi-linear transformation is proposed to improve the prediction accuracy. By introducing transformation functions to process the input, the relationship between the input and output is simplified, thereby facilitating the model training. Secondly, an improved weighted loss function scheme that considers a more comprehensive evaluation criterion to enhance the training process is proposed. Compared with traditional artificial neural networks, the average prediction error of the output and transfer curves is reduced by 33 % and 25 % for GAA and planar FET, respectively. Meanwhile, the proposed model demonstrates strong extrapolation ability. Moreover, compared to traditional methods of obtaining static characteristic curves, this method is more efficient. Furthermore. the proposed neural network-based static performance prediction model is converted to Verilog-A model, demonstrating potential in circuit simulation.</div></div>\",\"PeriodicalId\":49818,\"journal\":{\"name\":\"Microelectronics Journal\",\"volume\":\"154 \",\"pages\":\"Article 106485\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-11-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1879239124001899\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124001899","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

-本文针对全栅极(GAA)和平面场效应晶体管(FET)提出了基于神经网络的通用静态性能预测模型构建技术。首先,本文提出了一种独特的数据预处理方法--准线性变换,以提高预测精度。通过引入变换函数来处理输入,简化了输入和输出之间的关系,从而促进了模型训练。其次,提出了一种改进的加权损失函数方案,该方案考虑了更全面的评价标准,以加强训练过程。与传统的人工神经网络相比,GAA 和平面 FET 的输出和传输曲线的平均预测误差分别减少了 33% 和 25%。同时,所提出的模型具有很强的外推能力。此外,与获取静态特性曲线的传统方法相比,该方法更加高效。此外,所提出的基于神经网络的静态性能预测模型已被转换为 Verilog-A 模型,在电路仿真中展示了其潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
General neural network-based static performance prediction model construction techniques for gate-all-around and planar field effect transistor
—This paper proposes general neural network-based static performance prediction model construction techniques for gate-all-around (GAA) and planar field effect transistor (FET). Firstly, a unique data preprocessing method named quasi-linear transformation is proposed to improve the prediction accuracy. By introducing transformation functions to process the input, the relationship between the input and output is simplified, thereby facilitating the model training. Secondly, an improved weighted loss function scheme that considers a more comprehensive evaluation criterion to enhance the training process is proposed. Compared with traditional artificial neural networks, the average prediction error of the output and transfer curves is reduced by 33 % and 25 % for GAA and planar FET, respectively. Meanwhile, the proposed model demonstrates strong extrapolation ability. Moreover, compared to traditional methods of obtaining static characteristic curves, this method is more efficient. Furthermore. the proposed neural network-based static performance prediction model is converted to Verilog-A model, demonstrating potential in circuit simulation.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信