提高通过真空定向凝固炉生长的锰硅铸锭的质量，同时提高生长率，降低用于光伏应用的硅片成本：碳和氧分析

IF 3.8 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum Pub Date : 2024-11-07 DOI:10.1016/j.vacuum.2024.113816

Sugunraj Sekar , Srinivasan Manickam , Ramasamy Perumalsamy

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引用次数: 0

摘要

在本文中，我们提出了一个数值模型来研究多孔硅坩埚中氧原子的溶解、SiO 气体的形成、CO 气体的反向扩散以及多晶硅（mc-Si）在不同生长速率（3、6 和 9 mm/h）下通过真空定向凝固（VDS）生长过程中的碳氧偏析。由于熔融硅和多孔硅坩埚之间的反应受到限制，因此在硅锭的快速生长过程中氧的溶解量减少。多孔硅坩埚对氧气溶解的限制进一步减少了 VDS 炉内的化学反应。因此，在较高的生长速率下，碳和氧的偏析模式会受到影响。在 VDS 锰硅生长过程中，与其他生长速率相比，9 毫米/小时的生长速率可获得质量更好的 VDS 生长锰硅铸锭，由于碳和氧的浓度较低，这一速率可减少碳化硅沉淀和二氧化硅簇的形成。所获得的碳浓度最大程度地减少了线锯缺陷。根据这些数值结果（9 毫米/小时），我们开展了实验工作。利用傅立叶变换红外光谱和少数载流子寿命测量对制备的样品进行了分析。在少数载流子寿命测量中分析了样品中氧浓度的影响。通过傅立叶变换红外光谱计算氧气和碳的浓度，并将计算结果与数值模拟结果进行比较。

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Enhancement of the quality of mc-Si ingot grown by vacuum directional solidification furnace with growth rate increase reducing the cost of the wafer for PV application: Carbon and oxygen analysis

In this paper, we propose a numerical model to investigate the dissolution of oxygen atoms from the porous silica crucible, SiO gas formation, back diffusion of CO gas and segregation of carbon and oxygen during the growth of multi-crystalline silicon (mc-Si) by vacuum directional solidification (VDS) at different growth rates (3, 6 and 9 mm/h) by silt valve opening rate. The dissolution of oxygen decreases during the rapid growth of ingot because the reaction between the molten silicon and the porous silica crucible is constrained. This limitation on oxygen dissolution from the porous silica crucible further diminishes chemical reaction inside the VDS furnace. Consequently, the segregation pattern of the carbon and oxygen is affected at higher growth rate. During the VDS mc-Si growth, a growth rate of 9mm/h yields better quality of the VDS grown mc-Si ingots compared to other growth rates, this rate reduces SiC precipitation and SiO₂ cluster formation due to lower concentration of carbon and oxygen. The obtained carbon concentration minimizes the wire saw defects. Based on these numerical results (9 mm/h), we have implemented experimental work. Prepared samples are analyzed using FTIR spectra and minority carrier lifetime measurements. The effect of oxygen concentration in the samples is analyzed in the minority carrier lifetime measurements. The oxygen and carbon concentrations are calculated by FTIR spectra and their results are compared with the numerical simulation.

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来源期刊

Vacuum 工程技术-材料科学：综合

CiteScore

6.80

自引率

17.50%

发文量

审稿时长

34 days

期刊介绍： Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences. A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below. The scope of the journal includes: 1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes). 2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis. 3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification. 4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.