形态对氧化锡结构缺陷相关特性和光催化活性的影响

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Dipa Dutta Pathak
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引用次数: 0

摘要

二氧化锡(SnO2)具有多种形态结构,是宽带隙半导体的重要候选材料。本研究探讨了制造条件如何影响二氧化锡的形态,以及随后对不同结构(如高结晶二氧化锡量子点(QDs)、菜花(CF)和卡达姆花(KF))的物理性质产生的影响。光学和拉曼研究证实,QDs 和 CF 中都存在单电荷氧空位,从而导致绿色发射。QDs 表面积的增加为染料吸附提供了更多的活性位点,从而提高了光催化活性。QDs 和 CF 中的氧空位可作为电子受体,减少电子-空穴对的表面重组。比较分析表明,与花状 SnO2 微结构相比,QDs 是光催化降解亚甲基蓝(MB)和罗丹明 B(RhB)染料更有效的催化剂。在太阳光下,染料的光降解速度比在紫外线下慢。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Impact of morphology on defect related properties and photocatalytic activity of tin oxide structures

Impact of morphology on defect related properties and photocatalytic activity of tin oxide structures
Tin dioxide (SnO2), with diverse morphological structures, stands out as a key candidate among wide bandgap semiconductors. This study examines how fabrication conditions influence the morphology of SnO2 and the subsequent effects on its physical properties across different structures, such as highly crystalline SnO2 Quantum Dots (QDs), cauliflower (CF), and kadam flower (KF). Optical and Raman studies confirm the presence of singly charged oxygen vacancies, leading to green emission in both QDs and CF. The increased surface area of QDs offers more active sites for dye adsorption, thereby enhancing photocatalytic activity. The oxygen vacancies in QDs and CF act as electron acceptors, reducing the surface recombination of electron-hole pairs. Comparative analysis shows that QDs are more effective catalysts for the photocatalytic degradation of methylene blue (MB) and rhodamine B (RhB) dyes compared to flower-like SnO2 microstructures. The rate of dye photodegradation is slower under solar light than under UV light.
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来源期刊
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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