金属有机框架衍生的空心异质结构 NiS2/ZnS/C 混合球增强钠离子存储性能

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Shuai Wang , Zhenni Huang , Shanshan Song , Qibo Xia , Junjie Sun , Jiaming Li , Lu Zhang , Xiuqing Qin , Zhujun Yao , Yefeng Yang
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引用次数: 0

摘要

本文报道了以 Ni-MOF 为模板前驱体,通过溶热、离子吸附和后续硫化的组合方法,制备出嵌入空心碳球的金属有机框架(MOF)衍生异质结构 NiS2/ZnS 纳米粒子(简称 NiS2/ZnS/C)。活性材料的中空球形形态和原位碳层约束为离子/电子的快速传输提供了丰富的通道和路径,缓解了循环过程中的体积变化和团聚效应。此外,NiS2/ZnS 异质界面产生的内置电场可促进 Na+ 的传输动力学。得益于这些优势,最佳的 NiS2/ZnS/C 电极显示出较高的可逆容量(1.0 A/g 时为 568 mAh/g)、卓越的速率特性(5.0 A/g 时为 401 mAh/g)和出色的长期循环稳定性(5.0 A/g 时 3000 次循环的 79% 保持率)。这一设计理念有望用于构建其他具有异质结构的 SIB 负极材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Metal organic framework derived hollow heterostructured NiS2/ZnS/C hybrid spheres for enhanced sodium-ion storage properties
In this paper, we report the fabrication of metal organic framework (MOF)-derived heterostructured NiS2/ZnS nanoparticles embedded in hollow carbon spheres (denoted as NiS2/ZnS/C) using Ni-MOF as template precursor through a combined method of solvothermal, ion adsorption and subsequent sulfurization. The hollow spherical morphology and in-situ carbon layer confinement of active materials offer rich channels and paths for rapid ion/electron transport, alleviate the volume changes and agglomeration effect during cycling. Moreover, the built-in electric field created at the heterointerfaces of NiS2/ZnS can promote the Na+ transport kinetics. Benefitting from these advantages, the optimal NiS2/ZnS/C electrode shows a high reversible capacity (568 mAh/g at 1.0 A/g), superior rate property (401 mAh/g at 5.0 A/g) and outstanding long-term cycling stability (79 % retention over 3000 cycles at 5.0 A/g). This design concept is expected to be utilized for constructing other anode materials with heterostructures for SIBs.
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来源期刊
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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