Animesh Biswas , Ramjan Sk , Asmita Patra , Animesh Layek , Partha Pratim Ray
{"title":"识别异质结构 CuInSe2/TiO2 和 CuInSe2/HF-TiO2 的光感应 p-n 结:载流子传输机制研究","authors":"Animesh Biswas , Ramjan Sk , Asmita Patra , Animesh Layek , Partha Pratim Ray","doi":"10.1016/j.matlet.2024.137662","DOIUrl":null,"url":null,"abstract":"<div><div>Searching of electronic system with functionality is the epitome of the material research and in this context; nanomaterials CuInSe<sub>2</sub> and TiO<sub>2</sub> are the promising stars whose possible applications in electronic devices are just endless. However, the fabrication of junction based device using these two materials is most tantalizing prospect in material science is still at its rudimentary stage. In this letter, we report our recognition of current rectification behavior of CuInSe<sub>2</sub>/TiO<sub>2</sub> heterojunction, identical to the I-V characteristics of p-n junction diode and the impact of white light on it. The HOMO-LUMO band positions of hydrothermally derived CuInSe<sub>2</sub> and TiO<sub>2</sub> nanomaterials indicate that in thermal equilibrium a built-in-potential must arise across the junction. The current-rectification ratio of the configuration Al/CuInSe<sub>2</sub>/TiO<sub>2</sub>/ITO is improved from 560 to 627 at voltage ±2 V on white light illumination and this kind of behavior is certainly offering us an unprecedented way to realize the CuInSe<sub>2</sub>/TiO<sub>2</sub> hetero-junction as photo-sensing p-n diode. The device performance is improved further by replacing TiO<sub>2</sub> with HF treated TiO<sub>2</sub>.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":"379 ","pages":"Article 137662"},"PeriodicalIF":2.7000,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Recognition of light sensing p-n junction for hetero-structure CuInSe2/TiO2 and CuInSe2/HF-TiO2: Study of carrier transport mechanism\",\"authors\":\"Animesh Biswas , Ramjan Sk , Asmita Patra , Animesh Layek , Partha Pratim Ray\",\"doi\":\"10.1016/j.matlet.2024.137662\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Searching of electronic system with functionality is the epitome of the material research and in this context; nanomaterials CuInSe<sub>2</sub> and TiO<sub>2</sub> are the promising stars whose possible applications in electronic devices are just endless. However, the fabrication of junction based device using these two materials is most tantalizing prospect in material science is still at its rudimentary stage. In this letter, we report our recognition of current rectification behavior of CuInSe<sub>2</sub>/TiO<sub>2</sub> heterojunction, identical to the I-V characteristics of p-n junction diode and the impact of white light on it. The HOMO-LUMO band positions of hydrothermally derived CuInSe<sub>2</sub> and TiO<sub>2</sub> nanomaterials indicate that in thermal equilibrium a built-in-potential must arise across the junction. The current-rectification ratio of the configuration Al/CuInSe<sub>2</sub>/TiO<sub>2</sub>/ITO is improved from 560 to 627 at voltage ±2 V on white light illumination and this kind of behavior is certainly offering us an unprecedented way to realize the CuInSe<sub>2</sub>/TiO<sub>2</sub> hetero-junction as photo-sensing p-n diode. The device performance is improved further by replacing TiO<sub>2</sub> with HF treated TiO<sub>2</sub>.</div></div>\",\"PeriodicalId\":384,\"journal\":{\"name\":\"Materials Letters\",\"volume\":\"379 \",\"pages\":\"Article 137662\"},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0167577X24018020\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167577X24018020","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Recognition of light sensing p-n junction for hetero-structure CuInSe2/TiO2 and CuInSe2/HF-TiO2: Study of carrier transport mechanism
Searching of electronic system with functionality is the epitome of the material research and in this context; nanomaterials CuInSe2 and TiO2 are the promising stars whose possible applications in electronic devices are just endless. However, the fabrication of junction based device using these two materials is most tantalizing prospect in material science is still at its rudimentary stage. In this letter, we report our recognition of current rectification behavior of CuInSe2/TiO2 heterojunction, identical to the I-V characteristics of p-n junction diode and the impact of white light on it. The HOMO-LUMO band positions of hydrothermally derived CuInSe2 and TiO2 nanomaterials indicate that in thermal equilibrium a built-in-potential must arise across the junction. The current-rectification ratio of the configuration Al/CuInSe2/TiO2/ITO is improved from 560 to 627 at voltage ±2 V on white light illumination and this kind of behavior is certainly offering us an unprecedented way to realize the CuInSe2/TiO2 hetero-junction as photo-sensing p-n diode. The device performance is improved further by replacing TiO2 with HF treated TiO2.
期刊介绍:
Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials.
Contributions include, but are not limited to, a variety of topics such as:
• Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors
• Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart
• Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction
• Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots.
• Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing.
• Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic
• Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive