通过接口控制提高中波长 InAs/InAsSb nBn 红外探测器的性能

IF 3.1 3区物理与天体物理 Q2 INSTRUMENTS & INSTRUMENTATION

Infrared Physics & Technology Pub Date : 2024-11-03 DOI:10.1016/j.infrared.2024.105619

Ye Zhang , Yifan Shan , Faran Chang , Yan Liang , Xiangyu Zhang , Guowei Wang , Donghai Wu , Dongwei Jiang , Hongyue Hao , Yingqiang Xu , Haiqiao Ni , Dan Lu , Zhichuan Niu

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引用次数: 0

摘要

我们报告了以 AlSb/AlAs 超晶格为电子势垒，通过界面控制方法优化中波长 InAs/InAsSb nBn 红外探测器生长的研究。我们采用暗电流模型研究了不同工作温度下的主导暗电流机制。我们提取了采用不同界面生长方法生长的 InAs/InAsSb 材料的少数载流子寿命。电学和光学特性分析表明，通过迁移增强外延（MEE）生长的器件在 3 秒砷和锑浸泡时间内具有卓越的性能。在 -0.3 V 外加偏压和 150 K 工作温度下，最佳器件的暗电流密度为 8.95 × 10-6 A/cm2，在 3.8 µm 处的峰值比检测率为 7.12 × 1011 cm Hz1/2/W。

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Improvement of mid-wavelength InAs/InAsSb nBn infrared detectors performance through interface control

We report our study to optimize the growth of mid-wavelength InAs/InAsSb nBn infrared detectors through interface control method with AlSb/AlAs superlattices as electron barrier. The dark current model was employed to investigate the dominant dark current mechanism at various operating temperatures. We extracted the minority carrier lifetime of InAs/InAsSb material grown by different interface growth methods. Electrical and optical characterizations indicated superior performance of the device grown by migration-enhanced epitaxy (MEE) with a 3 s As and Sb soak time. With −0.3 V applied bias and 150 K operating temperature, the optimal device shown a dark current density of 8.95 × 10⁻⁶ A/cm² and peak specific detectivity of 7.12 × 10¹¹ cm Hz^1/2/W at 3.8 µm.

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来源期刊

Infrared Physics & Technology 物理-光学

CiteScore

5.70

自引率

12.10%

发文量

400

审稿时长

67 days

期刊介绍： The Journal covers the entire field of infrared physics and technology: theory, experiment, application, devices and instrumentation. Infrared'' is defined as covering the near, mid and far infrared (terahertz) regions from 0.75um (750nm) to 1mm (300GHz.) Submissions in the 300GHz to 100GHz region may be accepted at the editors discretion if their content is relevant to shorter wavelengths. Submissions must be primarily concerned with and directly relevant to this spectral region. Its core topics can be summarized as the generation, propagation and detection, of infrared radiation; the associated optics, materials and devices; and its use in all fields of science, industry, engineering and medicine. Infrared techniques occur in many different fields, notably spectroscopy and interferometry; material characterization and processing; atmospheric physics, astronomy and space research. Scientific aspects include lasers, quantum optics, quantum electronics, image processing and semiconductor physics. Some important applications are medical diagnostics and treatment, industrial inspection and environmental monitoring.