{"title":"栅极可调谐韦尔半金属晶体管中的室温负差分电阻","authors":"Shih-Hung Cheng, Ting-I Kuo, Er-Feng Hsieh, Wen-Jeng Hsueh","doi":"10.1016/j.rinp.2024.108039","DOIUrl":null,"url":null,"abstract":"<div><div>Negative differential resistance (NDR) has garnered substantial interest in propelling the progression of next-generation electronic devices. Weyl semimetals (WSMs) are a potential candidate for NDR devices; however, the NDR effect in WSMs has not been investigated. Here, we propose the gate-tunable transistor to theoretically develop the NDR<!--> <!-->effect in WSMs for the first time. The maximum peak-to-valley current ratio (PVR) of over 2 with a high current density peak at the NDR regime is observed with the help of the control gate and periodicity. Notably, it is demonstrated that the NDR effect can present stability for varying temperatures, even at room temperature, making the proposed device to be applied into practice. Finally, the<!--> <!-->NDR performances of the proposed devices are better than those of the present literature. Our findings highlight the potential of the NDR devices utilizing WSMs.</div></div>","PeriodicalId":21042,"journal":{"name":"Results in Physics","volume":"67 ","pages":"Article 108039"},"PeriodicalIF":4.4000,"publicationDate":"2024-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Room-temperature negative differential resistance in gate-tunable Weyl semimetal transistors\",\"authors\":\"Shih-Hung Cheng, Ting-I Kuo, Er-Feng Hsieh, Wen-Jeng Hsueh\",\"doi\":\"10.1016/j.rinp.2024.108039\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Negative differential resistance (NDR) has garnered substantial interest in propelling the progression of next-generation electronic devices. Weyl semimetals (WSMs) are a potential candidate for NDR devices; however, the NDR effect in WSMs has not been investigated. Here, we propose the gate-tunable transistor to theoretically develop the NDR<!--> <!-->effect in WSMs for the first time. The maximum peak-to-valley current ratio (PVR) of over 2 with a high current density peak at the NDR regime is observed with the help of the control gate and periodicity. Notably, it is demonstrated that the NDR effect can present stability for varying temperatures, even at room temperature, making the proposed device to be applied into practice. Finally, the<!--> <!-->NDR performances of the proposed devices are better than those of the present literature. Our findings highlight the potential of the NDR devices utilizing WSMs.</div></div>\",\"PeriodicalId\":21042,\"journal\":{\"name\":\"Results in Physics\",\"volume\":\"67 \",\"pages\":\"Article 108039\"},\"PeriodicalIF\":4.4000,\"publicationDate\":\"2024-11-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Results in Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2211379724007241\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Results in Physics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2211379724007241","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Room-temperature negative differential resistance in gate-tunable Weyl semimetal transistors
Negative differential resistance (NDR) has garnered substantial interest in propelling the progression of next-generation electronic devices. Weyl semimetals (WSMs) are a potential candidate for NDR devices; however, the NDR effect in WSMs has not been investigated. Here, we propose the gate-tunable transistor to theoretically develop the NDR effect in WSMs for the first time. The maximum peak-to-valley current ratio (PVR) of over 2 with a high current density peak at the NDR regime is observed with the help of the control gate and periodicity. Notably, it is demonstrated that the NDR effect can present stability for varying temperatures, even at room temperature, making the proposed device to be applied into practice. Finally, the NDR performances of the proposed devices are better than those of the present literature. Our findings highlight the potential of the NDR devices utilizing WSMs.
Results in PhysicsMATERIALS SCIENCE, MULTIDISCIPLINARYPHYSIC-PHYSICS, MULTIDISCIPLINARY
CiteScore
8.70
自引率
9.40%
发文量
754
审稿时长
50 days
期刊介绍:
Results in Physics is an open access journal offering authors the opportunity to publish in all fundamental and interdisciplinary areas of physics, materials science, and applied physics. Papers of a theoretical, computational, and experimental nature are all welcome. Results in Physics accepts papers that are scientifically sound, technically correct and provide valuable new knowledge to the physics community. Topics such as three-dimensional flow and magnetohydrodynamics are not within the scope of Results in Physics.
Results in Physics welcomes three types of papers:
1. Full research papers
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- Data and/or a plot plus a description
- Description of a new method or instrumentation
- Negative results
- Concept or design study
3. Letters to the Editor: Letters discussing a recent article published in Results in Physics are welcome. These are objective, constructive, or educational critiques of papers published in Results in Physics. Accepted letters will be sent to the author of the original paper for a response. Each letter and response is published together. Letters should be received within 8 weeks of the article''s publication. They should not exceed 750 words of text and 10 references.