Elimination of dead layer in silicon particle detectors via induced electric field based charge collection

The front surface of semiconductor particle detectors typically contains undepleted recombination active regions that the impinging particles pass through before reaching the sensitive area of the device. These so-called dead layers pose a fundamental limitation for achievable energy resolutions and are unavoidable in externally doped pn-junction detectors. Here, we fabricate a silicon particle detector using an alternative method for charge collection that extends the sensitive region to the front surface of the device and minimizes the dead layer. The junction is realized by inducing an electric field at the surface of the detector using a charged thin film. Such an approach has previously been implemented in photodiodes, which have demonstrated effective collection of charge carriers from the very surface of the devices. Our detector displays low leakage currents and recombination, which allow efficient charge collection throughout the device, as demonstrated by excellent internal quantum efficiency of the device. The detector is further characterized using detection of alpha particles as a case example. We achieve 20 keV energy resolutions that are, already without extensive device optimization, on the same level with commercial externally doped silicon particle detectors. Notably, the design shows promise for detection of shallow penetrating charged particles, which is very sensitive to dead layers.