InN/Al2O3 (0001) 的无氨准大气 MOCVD

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-11-02 DOI:10.1016/j.jcrysgro.2024.127980

Hisashi Yamada , Tokio Takahashi , Takahiro Gotow , Naoto Kumagai , Tetsuji Shimizu , Toshihide Ide , Tatsuro Maeda

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引用次数: 0

摘要

我们展示了利用高密度氮气（N2）微带线微波等离子体在 c 平面蓝宝石（Al2O3）衬底上生长的无氨准大气层金属有机化学气相沉积（AFQA-MOCVD）技术。研究了生长温度（Tg）和 N2 等离子体功率对结构特性的影响。提高 Tg 和 N2 等离子功率可明显改善 InN 的表面形态。相对于 Al2O3 (0001) 的面内晶体旋转 30°，生长出了完全应变松弛的 InN。扫描透射电子显微镜显示了 Al2O3 (0001) 上的 N 极 InN。与使用 NH3 的标准 MOCVD 相比，AFQA-MOCVD 能够通过提高 Tg 和 V/III 比率来扩大生长窗口。

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Ammonia-free quasi-atmospheric MOCVD of InN/Al2O3 (0001)

We demonstrate ammonia-free quasi-atmospheric metal–organic chemical vapor deposition (AFQA-MOCVD) of InN grown on c-plane sapphire (Al₂O₃) substrate using high-density nitrogen (N₂) microstrip-line microwave plasma. Dependence of growth temperature (T_g) and N₂ plasma power on structural properties were examined. Increasing T_g and N₂ plasma power markedly improved surface morphology of InN. An atomically smooth surface with layer-by-layer growth mode was realized at T_g of 750 °C under N₂ plasma power of 80 W. Fully strain-relaxed InN was grown on in-plane crystal rotation by 30° with respect to the Al₂O₃ (0001). N-polar InN on Al₂O₃ (0001) was revealed by scanning transmission electron microscopy. AFQA-MOCVD enables to expand growth windows by increasing T_g and V/III ratio compared to the standard MOCVD using NH₃.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.