Construction of Schottky barrier diode with a novel one-dimensional Cu(II)-based coordination polymer

Utilization of different kinds of materials in the fabrication of electronic device is considered as one of their most prominent employments. For modern civilization development of efficient electronic devices is extremely helpful not only due to their technological aspect but also for their laboratory to land applications. Keeping in mind of the above issues, a copper(II)-based zigzag one dimensional coordination polymer [Cu(4-dpds)(4-cba)₂]_n (where 4-dpds represents 1,2-di(pyridine-4-yl)disulfane and 4-cba represents 4-chloro benzoate anion) has been synthesized and well-characterized through X-ray single crystal diffraction analysis, XPS analysis, SEM analysis, powder X-ray diffraction analysis, thermogravimetric analysis, absorption spectral analysis and infra-red spectral analysis. Structural characterization through single crystal X-ray diffraction analysis reveals that the zigzag wave like architecture has been generated due to the presence of S–S linked ligands (4-dpds) and strong hydrogen bonding interactions play pivotal role in the development of the supramolecular aggregate. Interestingly, the optical band-gap (2.15 eV) obtained from absorption spectra and the electrical conductivity at room temperature (measured as 9.73 × 10⁻⁴ S cm⁻¹) revealed the semiconducting nature of the coordination polymer. The theoretical calculation projected HOMO-LUMO energy gap (2.11 eV) and the Fermi level (near to valence band) estimated from DOS also justified the p-type behavior of the derived material. The device fabricated by sandwiching the coordination polymer in between ITO coated glass substrate and metallic aluminum, was observed to exhibit non-linear rectifying nature in current-voltage characteristic plot. Therefore, it is obvious that these kinds of easily synthesizable lower dimensional coordination polymers can be considered as potential candidates in the fabrication of Schottky like devices and also helpful for technological advancement as well as for the up-gradation of future research in the corresponding field.