Samar Hassan A. Hassan, Mohamed Farhat O. Hameed, Korany R. Mahmoud, Amr Wageeh, S. S. A. Obayya
{"title":"全介质紧凑型宽带硅波导模式转换器","authors":"Samar Hassan A. Hassan, Mohamed Farhat O. Hameed, Korany R. Mahmoud, Amr Wageeh, S. S. A. Obayya","doi":"10.1007/s11082-024-07747-z","DOIUrl":null,"url":null,"abstract":"<div><p>Compact mode order converters (MOCs) operating at the mid-infrared regime are reported using silicon-on-calcium fluoride platform. The suggested designs convert the fundamental transverse electric (TE) mode to first and second order TE modes with total device lengths of only 5.89 μm and 5 μm, respectively, at λ = 3.14 µm. The full vectorial 3D finite-deference time-domain is utilized to analyze the TE<sub>0</sub> → TE<sub>1</sub> and TE<sub>0</sub>→TE<sub>2</sub> MOCs. The proposed designs depend on using dielectric material of Si<sub>3</sub>N<sub>4</sub> inside the Si core region to improve and facilitate the mode conversion process. The conversion efficiencies (inter-modal crosstalks [CTs]) are equal to 93.4% (− 19.2 dB), and 90% (− 17 dB) for TE<sub>0</sub>: TE<sub>1</sub> and TE<sub>0</sub>:TE<sub>2</sub> MOCs, respectively. Moreover, the reported designs have a wide wavelength range of 300 nm, where the conversion-efficiency (CE) and maximum CT are > 86% and < − 14.3 dB, respectively. Further, the fabrication tolerance of the suggested structures is handled to guarantee the presented mode converter’s fabrication viability. The reported designs can also be extended to other wavelength bands. In this regard, our device’s numerical results at λ = 1.55 µm are reported and compared to other conventional MOCs. The conversion efficiencies (inter-modal crosstalks [CTs]) are equal to 90% (− 19 dB), and 88% (− 19.7 dB) for TE<sub>0</sub>: TE<sub>1</sub> and TE<sub>0</sub>: TE<sub>2</sub> MOCs, respectively, at λ = 1.55 µm.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"All dielectric compact broadband silicon waveguide mode converters\",\"authors\":\"Samar Hassan A. Hassan, Mohamed Farhat O. Hameed, Korany R. Mahmoud, Amr Wageeh, S. S. A. Obayya\",\"doi\":\"10.1007/s11082-024-07747-z\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Compact mode order converters (MOCs) operating at the mid-infrared regime are reported using silicon-on-calcium fluoride platform. The suggested designs convert the fundamental transverse electric (TE) mode to first and second order TE modes with total device lengths of only 5.89 μm and 5 μm, respectively, at λ = 3.14 µm. The full vectorial 3D finite-deference time-domain is utilized to analyze the TE<sub>0</sub> → TE<sub>1</sub> and TE<sub>0</sub>→TE<sub>2</sub> MOCs. The proposed designs depend on using dielectric material of Si<sub>3</sub>N<sub>4</sub> inside the Si core region to improve and facilitate the mode conversion process. The conversion efficiencies (inter-modal crosstalks [CTs]) are equal to 93.4% (− 19.2 dB), and 90% (− 17 dB) for TE<sub>0</sub>: TE<sub>1</sub> and TE<sub>0</sub>:TE<sub>2</sub> MOCs, respectively. Moreover, the reported designs have a wide wavelength range of 300 nm, where the conversion-efficiency (CE) and maximum CT are > 86% and < − 14.3 dB, respectively. Further, the fabrication tolerance of the suggested structures is handled to guarantee the presented mode converter’s fabrication viability. The reported designs can also be extended to other wavelength bands. In this regard, our device’s numerical results at λ = 1.55 µm are reported and compared to other conventional MOCs. The conversion efficiencies (inter-modal crosstalks [CTs]) are equal to 90% (− 19 dB), and 88% (− 19.7 dB) for TE<sub>0</sub>: TE<sub>1</sub> and TE<sub>0</sub>: TE<sub>2</sub> MOCs, respectively, at λ = 1.55 µm.</p></div>\",\"PeriodicalId\":720,\"journal\":{\"name\":\"Optical and Quantum Electronics\",\"volume\":\"56 12\",\"pages\":\"\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2024-11-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical and Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11082-024-07747-z\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-024-07747-z","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
All dielectric compact broadband silicon waveguide mode converters
Compact mode order converters (MOCs) operating at the mid-infrared regime are reported using silicon-on-calcium fluoride platform. The suggested designs convert the fundamental transverse electric (TE) mode to first and second order TE modes with total device lengths of only 5.89 μm and 5 μm, respectively, at λ = 3.14 µm. The full vectorial 3D finite-deference time-domain is utilized to analyze the TE0 → TE1 and TE0→TE2 MOCs. The proposed designs depend on using dielectric material of Si3N4 inside the Si core region to improve and facilitate the mode conversion process. The conversion efficiencies (inter-modal crosstalks [CTs]) are equal to 93.4% (− 19.2 dB), and 90% (− 17 dB) for TE0: TE1 and TE0:TE2 MOCs, respectively. Moreover, the reported designs have a wide wavelength range of 300 nm, where the conversion-efficiency (CE) and maximum CT are > 86% and < − 14.3 dB, respectively. Further, the fabrication tolerance of the suggested structures is handled to guarantee the presented mode converter’s fabrication viability. The reported designs can also be extended to other wavelength bands. In this regard, our device’s numerical results at λ = 1.55 µm are reported and compared to other conventional MOCs. The conversion efficiencies (inter-modal crosstalks [CTs]) are equal to 90% (− 19 dB), and 88% (− 19.7 dB) for TE0: TE1 and TE0: TE2 MOCs, respectively, at λ = 1.55 µm.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.