与 CMOS 兼容的 TeO2 涂层 Si3N4 反抛物线肋波导,用于片上超连续真空发生和高分辨率 OCT

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Deepak Garg, Ajeet Kumar
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引用次数: 0

摘要

我们介绍了与 CMOS 兼容的氧化碲(TeO2)涂层 Si3N4 反抛物线肋波导的设计和理论分析,该波导具有氟化钡(BaF2)上下包层,用于产生高度相干的超连续光,在非线性光学领域具有潜在应用价值。通过调整各种几何参数并分析其对色散轮廓的影响,对拟议设计进行了色散工程设计。拟议设计的零色散波长(ZDW)接近 1.7 μm。在泵浦波长为 2 μm 时,该设计提供了较低的有效模式面积值 1.65 μm2,以及相应较高的非线性系数 2475.68 W-1 km-1。我们的模拟报告显示,在脉冲宽度为 45 fs、峰值功率为 6.1 kW 的双曲正割脉冲泵浦下,仅 1 mm 长的波导就能产生跨度为 2.32 个倍频程、波长为 1-5 μm 的高度相干超连续拓宽。此外,在 1.3 μm 波长下工作可产生 1.007 μm 的高轴向分辨率,从而提高了其用于光学相干断层扫描的潜力。拟议的波导可用于从非线性光谱学到光学相干断层扫描、从医学成像到高比特率电信的各种应用。由于所提出的设计与 CMOS 兼容,因此可将其定位为未来低损耗、高性能光子集成电路的绝佳平台。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMOS compatible TeO2—coated Si3N4 inverse parabolic rib waveguide for on-chip supercontinuum generation and high resolution OCT

We present the design and theoretical analysis of CMOS compatible Tellurium oxide (TeO2)-coated- Si3N4 inverse parabolic rib waveguide having upper and lower cladding of barium fluoride (BaF2) for the generation of highly coherent supercontinuum generation having potential applications in the field of non-linear optics. The proposed design is dispersion engineered by tailoring various geometrical parameters and analyzing their effect on the dispersion profile. The proposed design offers a Zero Dispersion Wavelength (ZDW) near 1.7 μm. The design offers a low value of effective mode area 1.65 μm2 and correspondingly high value of non-linear coefficient 2475.68 W−1 km−1 at pump wavelength of 2 μm. Our simulation reports a highly coherent supercontinuum broadening from 1–5 μm spanning over 2.32 octaves in only 1 mm long waveguide when pumped with hyperbolic secant pulses having pulse width 45 fs and peak power 6.1 kW. Additionally, operation at 1.3 μm yields a high axial resolution of 1.007 μm, enhancing its potential for optical coherence tomography. The proposed waveguide can help in various applications ranging from non-linear spectroscopy to optical coherence tomography and from medical imaging to high-bit rate telecommunication. Since the proposed design is CMOS compatible, it can be positioned as an excellent platform for low-loss and high performance future photonic integrated circuits.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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