用于太空应用的三维 MLC 闪存的混合场辐射

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nuclear Science Pub Date : 2024-10-07 DOI:10.1109/TNS.2024.3474746

Lorenzo Gonzales;Salvatore Danzeca;Salvatore Fiore;Iztok Kramberger

{"title":"用于太空应用的三维 MLC 闪存的混合场辐射","authors":"Lorenzo Gonzales;Salvatore Danzeca;Salvatore Fiore;Iztok Kramberger","doi":"10.1109/TNS.2024.3474746","DOIUrl":null,"url":null,"abstract":"This article presents the results of dynamic measurements of 3-D multilevel cell (MLC)\n<sc>NAND</small>\n flash memories in a mixed-field radiation facility CERN High-energy AcceleRator Mixed field/facility (CHARM), CERN. The results show that the behavior of devices is comparable to tests with specific high energy particles, such as high energy protons, heavy ions, and to TID tests. The observed TID and single-event effects (SEEs) in flash memories from the existing relevant work are also observed in mixed field, making the environment suitable for an accelerated system level test. As the CHARM hadron energy spectrum is comparable to the low Earth orbit (LEO) environment, the facility is appropriate as an accelerated test for space applications. Furthermore, the volumetric characteristics of the devices can be observed in this 3-D radiation facility. Additionally, bad bit (BB) spread was observed, and the necessary radiation induced errors in\n<sc>NAND</small>\n devices are discussed.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 11","pages":"2400-2408"},"PeriodicalIF":1.9000,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10706133","citationCount":"0","resultStr":"{\"title\":\"Mixed-Field Radiation of 3-D MLC Flash Memories for Space Applications\",\"authors\":\"Lorenzo Gonzales;Salvatore Danzeca;Salvatore Fiore;Iztok Kramberger\",\"doi\":\"10.1109/TNS.2024.3474746\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article presents the results of dynamic measurements of 3-D multilevel cell (MLC)\\n<sc>NAND</small>\\n flash memories in a mixed-field radiation facility CERN High-energy AcceleRator Mixed field/facility (CHARM), CERN. The results show that the behavior of devices is comparable to tests with specific high energy particles, such as high energy protons, heavy ions, and to TID tests. The observed TID and single-event effects (SEEs) in flash memories from the existing relevant work are also observed in mixed field, making the environment suitable for an accelerated system level test. As the CHARM hadron energy spectrum is comparable to the low Earth orbit (LEO) environment, the facility is appropriate as an accelerated test for space applications. Furthermore, the volumetric characteristics of the devices can be observed in this 3-D radiation facility. Additionally, bad bit (BB) spread was observed, and the necessary radiation induced errors in\\n<sc>NAND</small>\\n devices are discussed.\",\"PeriodicalId\":13406,\"journal\":{\"name\":\"IEEE Transactions on Nuclear Science\",\"volume\":\"71 11\",\"pages\":\"2400-2408\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10706133\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Nuclear Science\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10706133/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10706133/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了在欧洲核子研究中心（CERN）的混合场辐射设施 CERN High-energy AcceleRator Mixed Field/facility（CHARM）中对三维多级单元（MLC）NAND 闪存进行动态测量的结果。结果表明，器件的行为可与特定高能粒子（如高能质子、重离子）的测试以及 TID 测试相媲美。从现有相关工作中观察到的闪存中的 TID 和单事件效应 (SEE) 也在混合场中观察到，这使得环境适合于加速系统级测试。由于 CHARM 强子能谱与低地球轨道（LEO）环境相当，因此该设施适合作为空间应用的加速测试。此外，在这种三维辐射设施中还可以观察到设备的体积特性。此外，还观察到了坏位（BB）扩散，并讨论了必要的辐射诱导 NAND 器件中的误差。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mixed-Field Radiation of 3-D MLC Flash Memories for Space Applications

This article presents the results of dynamic measurements of 3-D multilevel cell (MLC) NAND flash memories in a mixed-field radiation facility CERN High-energy AcceleRator Mixed field/facility (CHARM), CERN. The results show that the behavior of devices is comparable to tests with specific high energy particles, such as high energy protons, heavy ions, and to TID tests. The observed TID and single-event effects (SEEs) in flash memories from the existing relevant work are also observed in mixed field, making the environment suitable for an accelerated system level test. As the CHARM hadron energy spectrum is comparable to the low Earth orbit (LEO) environment, the facility is appropriate as an accelerated test for space applications. Furthermore, the volumetric characteristics of the devices can be observed in this 3-D radiation facility. Additionally, bad bit (BB) spread was observed, and the necessary radiation induced errors in NAND devices are discussed.

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来源期刊

IEEE Transactions on Nuclear Science 工程技术-工程：电子与电气

CiteScore

3.70

自引率

27.80%

发文量

314

审稿时长

6.2 months

期刊介绍： The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years. The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.