{"title":"基于 Mn3Sn 的非共轭反铁磁隧道结与双层氮化硼隧道势垒","authors":"Zhanran Wang, Bo Bian, Lei Zhang, Zhizhou Yu","doi":"10.1063/5.0234130","DOIUrl":null,"url":null,"abstract":"Electrical manipulation and detection of antiferromagnetic states have opened a new era in the field of spintronics. Here, we propose a noncollinear antiferromagnetic tunnel junction (AFMTJ) consisting of noncollinear antiferromagnetic Mn3Sn as electrodes and a bilayer boron nitride as the insulating layer. By employing the first-principles method and the nonequilibrium Green's function, we predict that the tunneling magnetoresistance (TMR) of the AFMTJ with AA- and AB-stacked boron nitride can achieve approximately 97% and 49%, respectively. Moreover, different orientations of the Néel vector in the electrodes lead to four distinct tunneling states in the Mn3Sn/bilayer BN/Mn3Sn AFMTJ. The TMR ratio could be notably improved by adjusting the chemical potentials, reaching up to approximately 135% at a chemical potential of 0.1 eV for the AFMTJ with AA-stacked boron nitride. This enhancement can be primarily attributed to the reduction in the transmission of antiparallel configurations around the K and K′ points in the two-dimensional Brillouin zone. Our findings could provide extensive opportunities for all-electrical reading and writing of the Néel vector of noncollinear antiferromagnets, paving the way for the development of antiferromagnetic tunnel junctions with two-dimensional tunnel barriers.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":3.5000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Mn3Sn-based noncollinear antiferromagnetic tunnel junctions with bilayer boron nitride tunnel barriers\",\"authors\":\"Zhanran Wang, Bo Bian, Lei Zhang, Zhizhou Yu\",\"doi\":\"10.1063/5.0234130\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electrical manipulation and detection of antiferromagnetic states have opened a new era in the field of spintronics. Here, we propose a noncollinear antiferromagnetic tunnel junction (AFMTJ) consisting of noncollinear antiferromagnetic Mn3Sn as electrodes and a bilayer boron nitride as the insulating layer. By employing the first-principles method and the nonequilibrium Green's function, we predict that the tunneling magnetoresistance (TMR) of the AFMTJ with AA- and AB-stacked boron nitride can achieve approximately 97% and 49%, respectively. Moreover, different orientations of the Néel vector in the electrodes lead to four distinct tunneling states in the Mn3Sn/bilayer BN/Mn3Sn AFMTJ. The TMR ratio could be notably improved by adjusting the chemical potentials, reaching up to approximately 135% at a chemical potential of 0.1 eV for the AFMTJ with AA-stacked boron nitride. This enhancement can be primarily attributed to the reduction in the transmission of antiparallel configurations around the K and K′ points in the two-dimensional Brillouin zone. Our findings could provide extensive opportunities for all-electrical reading and writing of the Néel vector of noncollinear antiferromagnets, paving the way for the development of antiferromagnetic tunnel junctions with two-dimensional tunnel barriers.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2024-11-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0234130\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0234130","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
摘要
反铁磁态的电操纵和检测为自旋电子学领域开辟了一个新纪元。在这里,我们提出了一种非共线性反铁磁隧道结(AFMTJ),它由非共线性反铁磁 Mn3Sn 作为电极,双层氮化硼作为绝缘层。通过采用第一原理方法和非平衡格林函数,我们预测 AA 层和 AB 层氮化硼 AFMTJ 的隧穿磁阻(TMR)可分别达到约 97% 和 49%。此外,电极中奈尔矢量的不同取向导致 Mn3Sn/双层 BN/Mn3Sn AFMTJ 中出现了四种不同的隧道态。通过调整化学势,TMR 比率可显著提高,在 0.1 eV 的化学势下,带有 AA 层氮化硼的 AFMTJ 的 TMR 比率高达约 135%。这种提高主要归因于二维布里渊区中 K 点和 K′点附近反平行构型传输的减少。我们的发现为全电读写非共轭反铁磁体的奈尔矢量提供了广泛的机会,为开发具有二维隧道势垒的反铁磁隧道结铺平了道路。
Electrical manipulation and detection of antiferromagnetic states have opened a new era in the field of spintronics. Here, we propose a noncollinear antiferromagnetic tunnel junction (AFMTJ) consisting of noncollinear antiferromagnetic Mn3Sn as electrodes and a bilayer boron nitride as the insulating layer. By employing the first-principles method and the nonequilibrium Green's function, we predict that the tunneling magnetoresistance (TMR) of the AFMTJ with AA- and AB-stacked boron nitride can achieve approximately 97% and 49%, respectively. Moreover, different orientations of the Néel vector in the electrodes lead to four distinct tunneling states in the Mn3Sn/bilayer BN/Mn3Sn AFMTJ. The TMR ratio could be notably improved by adjusting the chemical potentials, reaching up to approximately 135% at a chemical potential of 0.1 eV for the AFMTJ with AA-stacked boron nitride. This enhancement can be primarily attributed to the reduction in the transmission of antiparallel configurations around the K and K′ points in the two-dimensional Brillouin zone. Our findings could provide extensive opportunities for all-electrical reading and writing of the Néel vector of noncollinear antiferromagnets, paving the way for the development of antiferromagnetic tunnel junctions with two-dimensional tunnel barriers.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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