{"title":"二维纳米抗反射结构提高硅太阳能电池的性能","authors":"Lilik Hasanah, Yuni Rahmawati, Chandra Wulandari, Budi Mulyanti, Roer Eka Pawinanto, Andrivo Rusydi","doi":"10.1007/s12633-024-03150-1","DOIUrl":null,"url":null,"abstract":"<div><p>Embedding an anti-reflection layer to reduce light reflection and suppress charge recombination is a key factor in increasing absorption and power conversion efficiency (PCE). Nanostructures are ideal as anti-reflection materials due to their typically superior optical properties. The shape and size of these nanostructures are important, as optimizing them can enhance and regulate light propagation, optical absorption, and light trapping. In this paper, absorption and electrical calculations were performed using Finite-Difference Time-Domain (FDTD) and CHARGE simulations. We demonstrate the effectiveness of optimizing the shape (nanodisk, sphere, and hemisphere), aspect ratio, diameter, lattice constant, and thickness of the nanostructure. These modifications significantly improved the performance of silicon solar cells, resulting in a PCE increase by 15.27%. The optimal PCE was obtained from modifying anti-reflection using a nanodisk structure with a diameter of 300 nm, a lattice constant of 600 nm, and a thickness of 187.5 nm. The high performance is demonstrated in both optical and electrical properties, with an absorption intensity of 97% and J<sub>sc</sub> of 49.77 mA/cm<sup>2</sup>. These superior results suggest that the proposed TiO<sub>2</sub> nanodisk-based silicon solar cells have great potential to enhance silicon solar cell performance.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 17","pages":"6277 - 6286"},"PeriodicalIF":2.8000,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two-Dimensional Nanostructure Anti-Reflection Enhancing Performance Silicon Solar Cells\",\"authors\":\"Lilik Hasanah, Yuni Rahmawati, Chandra Wulandari, Budi Mulyanti, Roer Eka Pawinanto, Andrivo Rusydi\",\"doi\":\"10.1007/s12633-024-03150-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Embedding an anti-reflection layer to reduce light reflection and suppress charge recombination is a key factor in increasing absorption and power conversion efficiency (PCE). Nanostructures are ideal as anti-reflection materials due to their typically superior optical properties. The shape and size of these nanostructures are important, as optimizing them can enhance and regulate light propagation, optical absorption, and light trapping. In this paper, absorption and electrical calculations were performed using Finite-Difference Time-Domain (FDTD) and CHARGE simulations. We demonstrate the effectiveness of optimizing the shape (nanodisk, sphere, and hemisphere), aspect ratio, diameter, lattice constant, and thickness of the nanostructure. These modifications significantly improved the performance of silicon solar cells, resulting in a PCE increase by 15.27%. The optimal PCE was obtained from modifying anti-reflection using a nanodisk structure with a diameter of 300 nm, a lattice constant of 600 nm, and a thickness of 187.5 nm. The high performance is demonstrated in both optical and electrical properties, with an absorption intensity of 97% and J<sub>sc</sub> of 49.77 mA/cm<sup>2</sup>. These superior results suggest that the proposed TiO<sub>2</sub> nanodisk-based silicon solar cells have great potential to enhance silicon solar cell performance.</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"16 17\",\"pages\":\"6277 - 6286\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-024-03150-1\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03150-1","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Two-Dimensional Nanostructure Anti-Reflection Enhancing Performance Silicon Solar Cells
Embedding an anti-reflection layer to reduce light reflection and suppress charge recombination is a key factor in increasing absorption and power conversion efficiency (PCE). Nanostructures are ideal as anti-reflection materials due to their typically superior optical properties. The shape and size of these nanostructures are important, as optimizing them can enhance and regulate light propagation, optical absorption, and light trapping. In this paper, absorption and electrical calculations were performed using Finite-Difference Time-Domain (FDTD) and CHARGE simulations. We demonstrate the effectiveness of optimizing the shape (nanodisk, sphere, and hemisphere), aspect ratio, diameter, lattice constant, and thickness of the nanostructure. These modifications significantly improved the performance of silicon solar cells, resulting in a PCE increase by 15.27%. The optimal PCE was obtained from modifying anti-reflection using a nanodisk structure with a diameter of 300 nm, a lattice constant of 600 nm, and a thickness of 187.5 nm. The high performance is demonstrated in both optical and electrical properties, with an absorption intensity of 97% and Jsc of 49.77 mA/cm2. These superior results suggest that the proposed TiO2 nanodisk-based silicon solar cells have great potential to enhance silicon solar cell performance.
期刊介绍:
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.