{"title":"微波和毫米波氮化镓和砷化镓集成电路：1 至 100 千兆赫的高性能","authors":"Zoya Popović","doi":"10.1109/MSSC.2024.3454552","DOIUrl":null,"url":null,"abstract":"This paper presents an overview of microwave and millimeter-wave III-V semiconductor circuits designed by graduate students as a part of their training. The monolithic microwave integrated circuits (MMICs) are designed for a wide range of applications, ranging from an on-chip GaAs Dicke radiometer at 1.4 GHz for non-invasive internal body temperature measurements, to a transmit-receive GaN chip from 75-110 GHz with about 1W of maximum output power and a minimum noise figure of 4.2 dB in transmit and receive mode, respectively. Several other circuits are briefly discussed, e.g. high-efficiency transmitters for high peak-to-average ratio (PAPR) signals and rectifying arrays for wireless power reception.","PeriodicalId":100636,"journal":{"name":"IEEE Solid-State Circuits Magazine","volume":"16 4","pages":"70-75"},"PeriodicalIF":0.0000,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Microwave and Millimeter-Wave GaN and GaAs ICs: High performance from 1 to 100 GHz\",\"authors\":\"Zoya Popović\",\"doi\":\"10.1109/MSSC.2024.3454552\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an overview of microwave and millimeter-wave III-V semiconductor circuits designed by graduate students as a part of their training. The monolithic microwave integrated circuits (MMICs) are designed for a wide range of applications, ranging from an on-chip GaAs Dicke radiometer at 1.4 GHz for non-invasive internal body temperature measurements, to a transmit-receive GaN chip from 75-110 GHz with about 1W of maximum output power and a minimum noise figure of 4.2 dB in transmit and receive mode, respectively. Several other circuits are briefly discussed, e.g. high-efficiency transmitters for high peak-to-average ratio (PAPR) signals and rectifying arrays for wireless power reception.\",\"PeriodicalId\":100636,\"journal\":{\"name\":\"IEEE Solid-State Circuits Magazine\",\"volume\":\"16 4\",\"pages\":\"70-75\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-11-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Solid-State Circuits Magazine\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10752810/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Magazine","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10752810/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microwave and Millimeter-Wave GaN and GaAs ICs: High performance from 1 to 100 GHz
This paper presents an overview of microwave and millimeter-wave III-V semiconductor circuits designed by graduate students as a part of their training. The monolithic microwave integrated circuits (MMICs) are designed for a wide range of applications, ranging from an on-chip GaAs Dicke radiometer at 1.4 GHz for non-invasive internal body temperature measurements, to a transmit-receive GaN chip from 75-110 GHz with about 1W of maximum output power and a minimum noise figure of 4.2 dB in transmit and receive mode, respectively. Several other circuits are briefly discussed, e.g. high-efficiency transmitters for high peak-to-average ratio (PAPR) signals and rectifying arrays for wireless power reception.
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