{"title":"厚度依赖性结构和生长演变与 Ni0.5Co0.5Fe2O4 铁氧体薄膜的介电弛豫行为和相关势垒跳变传导机制的关系。","authors":"Somnath Sahu, Shashi Priya Balmuchu, Pamu Dobbidi","doi":"10.1088/1361-648X/ad92d5","DOIUrl":null,"url":null,"abstract":"<p><p>Ferrite thin films are explored due to their promising properties, which are essential in various advanced electronic devices. However, depositing a film with pure phase and uniform microstructure is challenging. The Ni<sub>0.5</sub>Co<sub>0.5</sub>Fe<sub>2</sub>O<sub>4</sub>ferrite thin films are deposited using pulsed laser deposition technique to explore the effect of thickness on structural properties, growth evolution, temperature-dependent dielectric behavior, and conduction mechanisms. Microstructural analysis revealed that the films are uniformly grown, exhibiting surface roughness ranging from ∼2 to 4 nm. The dielectric response, adhering to a modified Debye model, exhibited multiple relaxation processes, with notable changes in the dielectric constant and loss as film thickness increased. Impedance spectra exhibited both space charge and dipolar relaxation phenomena, corroborated by Cole-Cole and electrical modulus plots. The analysis of the imaginary electric modulus using the Kohlrausch-Williams-Watts function revealed non-Debye-type relaxation in all deposited films, characterized by thermally activated broad peaks. Conductivity decreased up to a certain film thickness, and the frequency exponent derived from Jonscher's power law suggested a correlated barrier hopping model for AC conduction. Activation energies improved with film thickness up to 125 nm, consistent with a constant energy barrier for polarons during relaxation and conduction phases. The film with 125 nm thickness exhibited the optimal dielectric properties, with the maximum dielectric constant, minimum dielectric loss, and highest activation energy. These findings highlight the potential of dense, uniformly grown films with high dielectric constants and low dielectric losses for advanced electronic device applications.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3000,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thickness-dependent structural and growth evolution in relation to dielectric relaxation behavior and correlated barrier hopping conduction mechanism in Ni<sub>0.5</sub>Co<sub>0.5</sub>Fe<sub>2</sub>O<sub>4</sub>ferrite thin films.\",\"authors\":\"Somnath Sahu, Shashi Priya Balmuchu, Pamu Dobbidi\",\"doi\":\"10.1088/1361-648X/ad92d5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>Ferrite thin films are explored due to their promising properties, which are essential in various advanced electronic devices. However, depositing a film with pure phase and uniform microstructure is challenging. The Ni<sub>0.5</sub>Co<sub>0.5</sub>Fe<sub>2</sub>O<sub>4</sub>ferrite thin films are deposited using pulsed laser deposition technique to explore the effect of thickness on structural properties, growth evolution, temperature-dependent dielectric behavior, and conduction mechanisms. Microstructural analysis revealed that the films are uniformly grown, exhibiting surface roughness ranging from ∼2 to 4 nm. The dielectric response, adhering to a modified Debye model, exhibited multiple relaxation processes, with notable changes in the dielectric constant and loss as film thickness increased. Impedance spectra exhibited both space charge and dipolar relaxation phenomena, corroborated by Cole-Cole and electrical modulus plots. The analysis of the imaginary electric modulus using the Kohlrausch-Williams-Watts function revealed non-Debye-type relaxation in all deposited films, characterized by thermally activated broad peaks. Conductivity decreased up to a certain film thickness, and the frequency exponent derived from Jonscher's power law suggested a correlated barrier hopping model for AC conduction. Activation energies improved with film thickness up to 125 nm, consistent with a constant energy barrier for polarons during relaxation and conduction phases. The film with 125 nm thickness exhibited the optimal dielectric properties, with the maximum dielectric constant, minimum dielectric loss, and highest activation energy. These findings highlight the potential of dense, uniformly grown films with high dielectric constants and low dielectric losses for advanced electronic device applications.</p>\",\"PeriodicalId\":16776,\"journal\":{\"name\":\"Journal of Physics: Condensed Matter\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2024-11-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Physics: Condensed Matter\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-648X/ad92d5\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics: Condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1361-648X/ad92d5","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Thickness-dependent structural and growth evolution in relation to dielectric relaxation behavior and correlated barrier hopping conduction mechanism in Ni0.5Co0.5Fe2O4ferrite thin films.
Ferrite thin films are explored due to their promising properties, which are essential in various advanced electronic devices. However, depositing a film with pure phase and uniform microstructure is challenging. The Ni0.5Co0.5Fe2O4ferrite thin films are deposited using pulsed laser deposition technique to explore the effect of thickness on structural properties, growth evolution, temperature-dependent dielectric behavior, and conduction mechanisms. Microstructural analysis revealed that the films are uniformly grown, exhibiting surface roughness ranging from ∼2 to 4 nm. The dielectric response, adhering to a modified Debye model, exhibited multiple relaxation processes, with notable changes in the dielectric constant and loss as film thickness increased. Impedance spectra exhibited both space charge and dipolar relaxation phenomena, corroborated by Cole-Cole and electrical modulus plots. The analysis of the imaginary electric modulus using the Kohlrausch-Williams-Watts function revealed non-Debye-type relaxation in all deposited films, characterized by thermally activated broad peaks. Conductivity decreased up to a certain film thickness, and the frequency exponent derived from Jonscher's power law suggested a correlated barrier hopping model for AC conduction. Activation energies improved with film thickness up to 125 nm, consistent with a constant energy barrier for polarons during relaxation and conduction phases. The film with 125 nm thickness exhibited the optimal dielectric properties, with the maximum dielectric constant, minimum dielectric loss, and highest activation energy. These findings highlight the potential of dense, uniformly grown films with high dielectric constants and low dielectric losses for advanced electronic device applications.
期刊介绍:
Journal of Physics: Condensed Matter covers the whole of condensed matter physics including soft condensed matter and nanostructures. Papers may report experimental, theoretical and simulation studies. Note that papers must contain fundamental condensed matter science: papers reporting methods of materials preparation or properties of materials without novel condensed matter content will not be accepted.