利用垂直自校正忆阻器生成可隐藏的物理不可克隆函数和内存加密机。

IF 8 2区 材料科学 Q1 CHEMISTRY, PHYSICAL
Jea Min Cho, Seung Soo Kim, Tae Won Park, Dong Hoon Shin, Yeong Rok Kim, Hyung Jun Park, Dong Yun Kim, Soo Hyung Lee, Taegyun Park and Cheol Seong Hwang
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引用次数: 0

摘要

为了保护存储在边缘设备上的大量私人数据,硬件安全的重要性大大增加。物理不可克隆函数(PUF)能够利用物理设备固有的随机性生成真正的随机数字密钥,因此作为硬件安全基元日益受到重视。然而,传统方法需要在存储单元和 PUF 生成电路之间进行大量数据移动才能执行加密,这给能效和安全性带来了相当大的挑战。本研究介绍了一种创新方法,即在同一个垂直集成电阻式随机存取存储器(V-RRAM)中完成 PUF 密钥生成和加密,从而缓解了数据移动问题。所提出的 V-RRAM 加密机具有可隐藏的 PUF、高面积效率以及使用并行 XOR 逻辑运算的多线程数据处理功能。该加密机与其他机器进行了比较,显示出最高的时空成本效益。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Concealable physical unclonable function generation and an in-memory encryption machine using vertical self-rectifying memristors†

Concealable physical unclonable function generation and an in-memory encryption machine using vertical self-rectifying memristors†

The importance of hardware security increases significantly to protect the vast amounts of private data stored on edge devices. Physical unclonable functions (PUFs) are gaining prominence as hardware security primitives due to their ability to generate true random digital keys by exploiting the inherent randomness of the physical devices. Traditional approaches, however, require significant data movement between memory units and PUF generation circuits to perform encryption, presenting considerable energy efficiency and security challenges. This study introduces an innovative approach where PUF key generation and encryption are accomplished in the same vertically integrated resistive random access memory (V-RRAM), alleviating the data movement issue. The proposed V-RRAM encryption machine offers concealable PUFs, high area efficiency, and multi-thread data handling using parallel XOR logic operations. The encryption machine is compared with other machines, demonstrating the highest spatiotemporal cost-effectiveness.

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来源期刊
Nanoscale Horizons
Nanoscale Horizons Materials Science-General Materials Science
CiteScore
16.30
自引率
1.00%
发文量
141
期刊介绍: Nanoscale Horizons stands out as a premier journal for publishing exceptionally high-quality and innovative nanoscience and nanotechnology. The emphasis lies on original research that introduces a new concept or a novel perspective (a conceptual advance), prioritizing this over reporting technological improvements. Nevertheless, outstanding articles showcasing truly groundbreaking developments, including record-breaking performance, may also find a place in the journal. Published work must be of substantial general interest to our broad and diverse readership across the nanoscience and nanotechnology community.
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