利用 MOCVD 同源外延技术制造氮掺杂 Ga2O3 阻流层，用于制造高电压和低漏电的 Ga2O3 垂直器件

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-11-13 DOI:10.1063/5.0239622

Xiaorui Xu, Desen Chen, Yaoping Lu, Titao Li, Xueli Han, Duanyang Chen, Hongji Qi, Dan Yang, Minmin Zhu, Haizhong Zhang, Xiaoqiang Lu

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引用次数: 0

摘要

在这封信中，利用金属有机化学气相沉积同位外延技术生长出了高质量、高电阻率的氮（N）掺杂Ga2O3阻流层（CBL）。通过使用氧化亚氮（N2O）作为 Ga2O3 生长的氧源和掺杂氮源，并控制生长温度，生长出的 CBL 可有效实现高（∼1019 cm-3）或低（∼1017 cm-3）的氮掺杂浓度，以及较高的晶体质量。此外，还在器件层面验证了所开发的 CBL 的电气特性，结果表明，使用 CBL 的器件可以承受超过 3.5 kV 的双向电压，且漏电极低（≤1 × 10-4 A/cm2 ）。这项工作为实现高电压、低漏电的 Ga2O3 垂直器件，特别是金属氧化物半导体场效应晶体管铺平了道路。

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Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication

In this Letter, a high-quality and high-resistivity nitrogen (N)-doped Ga2O3 current blocking layer (CBL) is grown utilizing metal-organic chemical vapor deposition homoepitaxial technology. By using nitrous oxide (N2O) as oxygen source for Ga2O3 growth and N source for doping and controlling the growth temperature, the grown CBL can effectively achieve high (∼1019 cm−3) or low (∼1017 cm−3) N doping concentrations, as well as high crystal quality. Furthermore, the electrical properties of the developed CBL are verified at the device level, which shows that the device using the CBL can withstand bidirectional voltages exceeding 3.5 kV with very low leakage (≤1 × 10−4 A/cm2). This work can pave the way for the realization of high-voltage and low-leakage Ga2O3 vertical devices, especially metal-oxide-semiconductor field effect transistors.

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.