Band edge modulation for high-performance LL-SAW resonators on LiNbO3/SiC by introducing an ultra-thin intermediate oxide layer.

With the exploding demand of rapid information transmission, high-frequency acoustic filtering devices are becoming an immediate need. Longitudinal leaky surface acoustic wave (LL-SAW) devices with unique advantages can be a promising platform. In this paper, we introduce a 100 nm intermediate oxide layer into the X-cut lithium niobate on silicon carbide (LiNbO₃/SiC) to improve the in-band performance of LL-SAW resonators. First, the dispersion curves of the structures are analyzed by finite element method. In this part, we successfully interpret the intrinsic low quality factor (Q) of LL-SAW on LiNbO₃/SiC in general design, and predict the enhancement of Q by introducing an intermediate oxide layer without degradation on spurious response. Then, one port resonators considered in the simulation are fabricated and measured. As a result, enhancements in Bode Q among the whole passband are confirmed. Compared with devices state of art, resonators with leading performances are demonstrated. The fabricated resonators have peak-valley admittance ratio of 63.87 dB, Bode Q of ∼300 at f_r and ∼530 at f_ar, k_eff²of 15.66 % and phase velocity of 6187.3 m/s. Additionally, the resonant frequency of SH1 mode shifts to higher frequency. This work enables the design of next generation high frequency mobile communication filters.