电子速度调制对氮化铝/氮化镓高频晶体管微波功率性能的影响

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-11-13 DOI:10.1063/5.0222095

Mingyan Wang, Yuanjie Lv, Heng Zhou, Chao Liu, Peng Cui, Zhaojun Lin

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引用次数: 0

摘要

在本研究中，我们证明了电子速度调制（Δve/ΔVgs）对氮化镓/氮化镓高频晶体管微波功率性能的影响。为了进行实验，我们制作了栅极长度从 500 纳米到 80 纳米不等的 AlGaN/GaN HFET。通过将漂移扩散求解器与蒙特卡罗方法相结合，对电子传输进行了研究。随着栅极长度 (Lg) 从 500 nm 到 200 nm 的变化，极化库仑场散射的增加导致了 Δve/ΔVgs 的增加，而更强的电场 (E) 增加了 ve 并提高了跨导 (gm)，这反过来又导致了 HFET 中更大的功率增益 (Gp)。更高的功率输出（Pout）也是由于ve 的增加提高了饱和输出电流（Ids,sat）。在电子密度 (ns) < 3.42 × 1012cm-2 时，AlGaN/GaN 高频晶体管的电子速度调制所产生的独特现象可以作为一种有效机制来提高 AlGaN/GaN 高频晶体管的功率增益。

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Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs

In this study, we demonstrate the effects of electron velocity modulation (Δve/ΔVgs) on the microwave power performance for AlGaN/GaN HFETs. In order to conduct the experiments, AlGaN/GaN HFETs with gate lengths ranging from 500 to 80 nm were fabricated. Electron transport was investigated by coupling a drift-diffusion solver with the Monte Carlo method. As gate lengths (Lg) varied from 500 to 200 nm, the increased polarization Coulomb field scattering led to an increase in Δve/ΔVgs and the stronger electric field (E) increased ve and enhanced the transconductance (gm), which in turn led to a greater power gain (Gp) in the HFETs. The higher power output (Pout) was also due to the increased ve that boosted the saturated output current (Ids,sat). The unique phenomenon that occurs from electron velocity modulation of AlGaN/GaN HFETs at electron densities (ns) < 3.42 × 1012cm−2 can be used as an effective mechanism to enhance the power gain of AlGaN/GaN HFETs.

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.