库仑相关性与块状 V2Te2O 的电子结构

IF 1.4 4区 物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY
S. L. Skornyakov, I. O. Trifonov, V. I. Anisimov
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引用次数: 0

摘要

我们采用电荷自洽密度泛函理论和动态均场理论方法,研究了库仑关联对体范德华材料 V2Te2O 电子结构的影响。我们的研究结果表明,在费米能附近存在着明显的相关性引起的谱函数重正化现象,但这种现象并不伴随着谱权向哈伯德带的转移。计算得出的 V (3d)态的准粒子有效质量增强 m*/m 从 1.31 到 3.32 不等,这表明相关效应具有轨道依赖性,并表明在 V (3d)壳中局部矩的形成具有轨道选择性。我们证明,考虑到 V(3d\)电子之间的库仑相互作用会产生电子比热系数 \(\gamma = 26.94\) mJ K-2 mol-1,这与实验结果是合理一致的。我们的研究表明,库仑相关的强度足以引发布里渊区 Z-Γ-X 路径上的带移,从而导致密度泛函理论预测的以Γ-Z 方向为中心的电子费米面袋的塌陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Coulomb Correlations and the Electronic Structure of Bulk V2Te2O

The effect of Coulomb correlations on the electronic structure of bulk van der Waals material V2Te2O is studied by the charge self-consistent density functional theory and dynamical mean-field theory method. Our results show a significant correlation-induced renormalization of the spectral functions in the vicinity of the Fermi energy which is not accompanied by a transfer of the spectral weight to Hubbard bands. The computed quasiparticle effective mass enhancement m*/m for the V \(3d\) states varies from 1.31 to 3.32 indicating an orbital-dependent nature of correlation effects and suggests an orbital-selective formation of local moments in the V \(3d\) shell. We demonstrate that taking into account of Coulomb interaction between the V \(3d\) electrons yields the electronic specific heat coefficient \(\gamma = 26.94\) mJ K–2 mol–1 in reasonable agreement with the experiment. We show that the strength of Coulomb correlations is sufficient to trigger a band shift along the Z–Γ–X path of the Brillouin zone leading to a collapse of the electronic Fermi surface pocket centered on the Γ–Z direction predicted by density functional theory.

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来源期刊
JETP Letters
JETP Letters 物理-物理:综合
CiteScore
2.40
自引率
30.80%
发文量
164
审稿时长
3-6 weeks
期刊介绍: All topics of experimental and theoretical physics including gravitation, field theory, elementary particles and nuclei, plasma, nonlinear phenomena, condensed matter, superconductivity, superfluidity, lasers, and surfaces.
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