通过混合 PVD 沉积系统制备的 Cu2ZnSnS4 薄膜:Mo/CZTS 界面的多层石墨碳中间层

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Neslihan Akcay, Ali Rıza Yıldırım, Deha Kesik, Valery F. Gremenok, Süleyman Özçelik, Abdullah Ceylan
{"title":"通过混合 PVD 沉积系统制备的 Cu2ZnSnS4 薄膜:Mo/CZTS 界面的多层石墨碳中间层","authors":"Neslihan Akcay,&nbsp;Ali Rıza Yıldırım,&nbsp;Deha Kesik,&nbsp;Valery F. Gremenok,&nbsp;Süleyman Özçelik,&nbsp;Abdullah Ceylan","doi":"10.1007/s10854-024-13854-0","DOIUrl":null,"url":null,"abstract":"<div><p>We report the insertion of a new intermediate layer, a multi-layered graphitic carbon (MLGC), at Mo/CZTS interface and its impact on the structural and morphological characteristics of the back interface and absorber. MLGC was synthesized directly on Mo-coated SLG under a gas mixture flow of H<sub>2</sub>/CH<sub>4</sub> at 550 °C via PECVD for 3 and 5 h. CZTS precursors were prepared on SLG/Mo and MLGC-coated SLG/Mo in a hybrid physical vapor deposition system, including evaporation and sputtering techniques, then subjected to sulfurization at 550 °C. The sheet resistance of back contact, microstructural parameters of the absorbers, the distributions of C and constituent elements were investigated. The diffraction peaks of the hexagonal Mo<sub>2</sub>C indicated the reaction between the C and Mo before the MLGC’s growth. Raman analysis confirmed the formation of the MLGC during the long deposition time after the Mo<sub>2</sub>C formation. With the addition of MLGC, the sheet resistance of the back contact decreased from 2 to 0.5 Ω/sq, and the crystallite size of the absorbers improved. Raman spectra from the interface exhibited that MoS<sub>2</sub> peaks’ intensities significantly reduced with increasing the growth time. This implied that the 5 h-deposited MLGC was more effective in blocking the reaction between Mo and S. The absorbers with the MLGC had more uniform surface morphologies, densely packed grains, and fewer secondary phases. FIB analysis revealed the separation of the absorber with the 5 h-deposited MLGC into two parts due to C impurity. More C diffusion into the absorber for this sample was confirmed by SIMS.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Cu2ZnSnS4 films prepared by a hybrid PVD deposition system: a multi-layered graphitic carbon intermediate layer at the Mo/CZTS interface\",\"authors\":\"Neslihan Akcay,&nbsp;Ali Rıza Yıldırım,&nbsp;Deha Kesik,&nbsp;Valery F. Gremenok,&nbsp;Süleyman Özçelik,&nbsp;Abdullah Ceylan\",\"doi\":\"10.1007/s10854-024-13854-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We report the insertion of a new intermediate layer, a multi-layered graphitic carbon (MLGC), at Mo/CZTS interface and its impact on the structural and morphological characteristics of the back interface and absorber. MLGC was synthesized directly on Mo-coated SLG under a gas mixture flow of H<sub>2</sub>/CH<sub>4</sub> at 550 °C via PECVD for 3 and 5 h. CZTS precursors were prepared on SLG/Mo and MLGC-coated SLG/Mo in a hybrid physical vapor deposition system, including evaporation and sputtering techniques, then subjected to sulfurization at 550 °C. The sheet resistance of back contact, microstructural parameters of the absorbers, the distributions of C and constituent elements were investigated. The diffraction peaks of the hexagonal Mo<sub>2</sub>C indicated the reaction between the C and Mo before the MLGC’s growth. Raman analysis confirmed the formation of the MLGC during the long deposition time after the Mo<sub>2</sub>C formation. With the addition of MLGC, the sheet resistance of the back contact decreased from 2 to 0.5 Ω/sq, and the crystallite size of the absorbers improved. Raman spectra from the interface exhibited that MoS<sub>2</sub> peaks’ intensities significantly reduced with increasing the growth time. This implied that the 5 h-deposited MLGC was more effective in blocking the reaction between Mo and S. The absorbers with the MLGC had more uniform surface morphologies, densely packed grains, and fewer secondary phases. FIB analysis revealed the separation of the absorber with the 5 h-deposited MLGC into two parts due to C impurity. More C diffusion into the absorber for this sample was confirmed by SIMS.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13854-0\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13854-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

我们报告了在 Mo/CZTS 界面插入新中间层--多层石墨碳 (MLGC) 的情况及其对背面界面和吸收器的结构和形态特征的影响。通过混合物理气相沉积系统(包括蒸发和溅射技术)在 SLG/Mo 和 MLGC 涂层 SLG/Mo 上制备 CZTS 前驱体,然后在 550 °C 下进行硫化。研究了背面接触的片电阻、吸收体的微观结构参数、C 和组成元素的分布。六边形 Mo2C 的衍射峰表明,在 MLGC 生长之前,C 和 Mo 发生了反应。拉曼分析证实了 MLGC 是在 Mo2C 形成后的长时间沉积过程中形成的。随着 MLGC 的加入,背面接触的片状电阻从 2 Ω/sq 减小到 0.5 Ω/sq,吸收体的结晶尺寸也得到了改善。界面的拉曼光谱显示,随着生长时间的延长,MoS2 峰的强度明显降低。使用 MLGC 的吸收体表面形态更均匀,晶粒更致密,次生相更少。FIB 分析表明,由于 C 杂质的存在,沉积了 5 小时 MLGC 的吸收体被分成了两部分。SIMS 证实该样品有更多的 C 扩散到吸收体中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Cu2ZnSnS4 films prepared by a hybrid PVD deposition system: a multi-layered graphitic carbon intermediate layer at the Mo/CZTS interface

We report the insertion of a new intermediate layer, a multi-layered graphitic carbon (MLGC), at Mo/CZTS interface and its impact on the structural and morphological characteristics of the back interface and absorber. MLGC was synthesized directly on Mo-coated SLG under a gas mixture flow of H2/CH4 at 550 °C via PECVD for 3 and 5 h. CZTS precursors were prepared on SLG/Mo and MLGC-coated SLG/Mo in a hybrid physical vapor deposition system, including evaporation and sputtering techniques, then subjected to sulfurization at 550 °C. The sheet resistance of back contact, microstructural parameters of the absorbers, the distributions of C and constituent elements were investigated. The diffraction peaks of the hexagonal Mo2C indicated the reaction between the C and Mo before the MLGC’s growth. Raman analysis confirmed the formation of the MLGC during the long deposition time after the Mo2C formation. With the addition of MLGC, the sheet resistance of the back contact decreased from 2 to 0.5 Ω/sq, and the crystallite size of the absorbers improved. Raman spectra from the interface exhibited that MoS2 peaks’ intensities significantly reduced with increasing the growth time. This implied that the 5 h-deposited MLGC was more effective in blocking the reaction between Mo and S. The absorbers with the MLGC had more uniform surface morphologies, densely packed grains, and fewer secondary phases. FIB analysis revealed the separation of the absorber with the 5 h-deposited MLGC into two parts due to C impurity. More C diffusion into the absorber for this sample was confirmed by SIMS.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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