{"title":"用于太阳能应用的 Cu2MnSnS4/p-Si 光传感器的光电性能","authors":"H. Alhummiany","doi":"10.1007/s10854-024-13835-3","DOIUrl":null,"url":null,"abstract":"<div><p>The Cu<sub>2</sub>MnSnS<sub>4</sub> (CMTS) film was prepared using the hydrothermal technique. The CMTS thin film was analyzed by the techniques of Ultraviolet–Visible (UV–Vis) spectroscopy, energy-dispersive X-ray (EDX or EDS), and scanning electron microscopy (SEM). To fabricate Al/Cu<sub>2</sub>MnSnS<sub>4</sub> (CMTS)/p-Si/Al diode, the CMTS film was covered on p-Si wafer by a sol–gel spin-coating technique and the metallic contacts were prepared on film with pure aluminum. The current–voltage (I–V) properties of Al/Cu<sub>2</sub>MnSnS<sub>4</sub> (CMTS)/p-Si/Al device were analyzed under dark and distinct illumination intensities (20, 40, 60, 80, and 100 mW/cm<sup>2</sup>). It was determined that the effect of light created a higher current compared to the dark current, and the reverse bias current increased approximately 80 times depending on the illumination intensity, which confirmed that the produced diode exhibited photoconductive behavior. The ideality factor (barrier height) values obtained as a result of the measurements performed in the dark and 100 mW/cm<sup>2</sup> light intensity conditions of the produced device were found to be 3.85 (0.68 eV) and 4.54 (0.67 eV), respectively. Transient current measurements also supported this situation and also showed that the device could be enhanced as a photo-capacitor. In addition to these measurements, the effect of frequency and applied voltage on capacitance properties was investigated. The acquired results showed that both conductivity and capacitance were under a strong influence in reverse biasing. Considering all the results together, it has been shown that the used Cu<sub>2</sub>MnSnS<sub>4</sub> (CMTS) material and the produced device are a strong candidate to be used in photovoltaic technology.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 32","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoelectrical performance of Cu2MnSnS4/p-Si photosensor for solar energy applications\",\"authors\":\"H. Alhummiany\",\"doi\":\"10.1007/s10854-024-13835-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The Cu<sub>2</sub>MnSnS<sub>4</sub> (CMTS) film was prepared using the hydrothermal technique. The CMTS thin film was analyzed by the techniques of Ultraviolet–Visible (UV–Vis) spectroscopy, energy-dispersive X-ray (EDX or EDS), and scanning electron microscopy (SEM). To fabricate Al/Cu<sub>2</sub>MnSnS<sub>4</sub> (CMTS)/p-Si/Al diode, the CMTS film was covered on p-Si wafer by a sol–gel spin-coating technique and the metallic contacts were prepared on film with pure aluminum. The current–voltage (I–V) properties of Al/Cu<sub>2</sub>MnSnS<sub>4</sub> (CMTS)/p-Si/Al device were analyzed under dark and distinct illumination intensities (20, 40, 60, 80, and 100 mW/cm<sup>2</sup>). It was determined that the effect of light created a higher current compared to the dark current, and the reverse bias current increased approximately 80 times depending on the illumination intensity, which confirmed that the produced diode exhibited photoconductive behavior. The ideality factor (barrier height) values obtained as a result of the measurements performed in the dark and 100 mW/cm<sup>2</sup> light intensity conditions of the produced device were found to be 3.85 (0.68 eV) and 4.54 (0.67 eV), respectively. Transient current measurements also supported this situation and also showed that the device could be enhanced as a photo-capacitor. In addition to these measurements, the effect of frequency and applied voltage on capacitance properties was investigated. The acquired results showed that both conductivity and capacitance were under a strong influence in reverse biasing. Considering all the results together, it has been shown that the used Cu<sub>2</sub>MnSnS<sub>4</sub> (CMTS) material and the produced device are a strong candidate to be used in photovoltaic technology.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 32\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13835-3\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13835-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Photoelectrical performance of Cu2MnSnS4/p-Si photosensor for solar energy applications
The Cu2MnSnS4 (CMTS) film was prepared using the hydrothermal technique. The CMTS thin film was analyzed by the techniques of Ultraviolet–Visible (UV–Vis) spectroscopy, energy-dispersive X-ray (EDX or EDS), and scanning electron microscopy (SEM). To fabricate Al/Cu2MnSnS4 (CMTS)/p-Si/Al diode, the CMTS film was covered on p-Si wafer by a sol–gel spin-coating technique and the metallic contacts were prepared on film with pure aluminum. The current–voltage (I–V) properties of Al/Cu2MnSnS4 (CMTS)/p-Si/Al device were analyzed under dark and distinct illumination intensities (20, 40, 60, 80, and 100 mW/cm2). It was determined that the effect of light created a higher current compared to the dark current, and the reverse bias current increased approximately 80 times depending on the illumination intensity, which confirmed that the produced diode exhibited photoconductive behavior. The ideality factor (barrier height) values obtained as a result of the measurements performed in the dark and 100 mW/cm2 light intensity conditions of the produced device were found to be 3.85 (0.68 eV) and 4.54 (0.67 eV), respectively. Transient current measurements also supported this situation and also showed that the device could be enhanced as a photo-capacitor. In addition to these measurements, the effect of frequency and applied voltage on capacitance properties was investigated. The acquired results showed that both conductivity and capacitance were under a strong influence in reverse biasing. Considering all the results together, it has been shown that the used Cu2MnSnS4 (CMTS) material and the produced device are a strong candidate to be used in photovoltaic technology.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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