{"title":"具有高色纯度的高效 SiO2:Ce 多孔纳米荧光粉,可满足场发射显示器 (FED) 的青色发射间隙要求","authors":"I. M. Nagpure","doi":"10.1007/s10854-024-13843-3","DOIUrl":null,"url":null,"abstract":"<div><p>An efficient SiO<sub>2</sub>:Ce nanophosphor has been synthesized by fuel assisted combustion method, later annealed in a reducing atmosphere to achieve phase stability and to monitor the effect on its CL properties. The formation of low–quartz’s structure is reported by using XRD analysis. The spherical porous nanosized morphology is revealed by HRTEM analysis. The porous nanophosphor is excited by electron beam exposure at pressure of 10<sup>− 6</sup> Torr with different electric power (i.e. voltage of 1−5 keV and current of 3−18 µA). A stable cyan (blue−green) emission has been recorded regardless of change in applied electrical power. The minor increase in the CL intensity is also noted for annealed nanophosphor. In the RGB color model, used to create all the colours on a computer or television display, cyan is made by mixing equal amounts of green and blue light. An efficient and stable CL broadband emission extending from 300 to 600 nm maximum at 440−525 nm is recorded makes the SiO<sub>2</sub>:Ce porous nanophosphor a suitable candidate to fulfil the cyan emission gap of the Field emission displays (FEDs).</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An efficient SiO2:Ce porous nanophosphor with high color purity to fulfil the cyan emission gap of field emission displays (FEDs)\",\"authors\":\"I. M. Nagpure\",\"doi\":\"10.1007/s10854-024-13843-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>An efficient SiO<sub>2</sub>:Ce nanophosphor has been synthesized by fuel assisted combustion method, later annealed in a reducing atmosphere to achieve phase stability and to monitor the effect on its CL properties. The formation of low–quartz’s structure is reported by using XRD analysis. The spherical porous nanosized morphology is revealed by HRTEM analysis. The porous nanophosphor is excited by electron beam exposure at pressure of 10<sup>− 6</sup> Torr with different electric power (i.e. voltage of 1−5 keV and current of 3−18 µA). A stable cyan (blue−green) emission has been recorded regardless of change in applied electrical power. The minor increase in the CL intensity is also noted for annealed nanophosphor. In the RGB color model, used to create all the colours on a computer or television display, cyan is made by mixing equal amounts of green and blue light. An efficient and stable CL broadband emission extending from 300 to 600 nm maximum at 440−525 nm is recorded makes the SiO<sub>2</sub>:Ce porous nanophosphor a suitable candidate to fulfil the cyan emission gap of the Field emission displays (FEDs).</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13843-3\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13843-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
An efficient SiO2:Ce porous nanophosphor with high color purity to fulfil the cyan emission gap of field emission displays (FEDs)
An efficient SiO2:Ce nanophosphor has been synthesized by fuel assisted combustion method, later annealed in a reducing atmosphere to achieve phase stability and to monitor the effect on its CL properties. The formation of low–quartz’s structure is reported by using XRD analysis. The spherical porous nanosized morphology is revealed by HRTEM analysis. The porous nanophosphor is excited by electron beam exposure at pressure of 10− 6 Torr with different electric power (i.e. voltage of 1−5 keV and current of 3−18 µA). A stable cyan (blue−green) emission has been recorded regardless of change in applied electrical power. The minor increase in the CL intensity is also noted for annealed nanophosphor. In the RGB color model, used to create all the colours on a computer or television display, cyan is made by mixing equal amounts of green and blue light. An efficient and stable CL broadband emission extending from 300 to 600 nm maximum at 440−525 nm is recorded makes the SiO2:Ce porous nanophosphor a suitable candidate to fulfil the cyan emission gap of the Field emission displays (FEDs).
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.