用于增强光电化学水氧化的富氧空位 CoPi/TiO2 纳米管/WO3 电极

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Shujun Yu, Ke Sun, Guangyu Fang, Jiangwang Feng, Qiaonan Yu, Junling Chen, Pengcheng Wu, Keliang Wu
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引用次数: 0

摘要

二氧化钛已被广泛应用于光催化水分离,但其宽带隙和易重组载流子限制了其进一步应用。本研究采用阳极氧化法制备了高度有序的 TiO2 纳米管阵列(TiO2 NBs),并通过局部非晶化提供了更多的氧空位。氧空位的增加提高了载流子分离效率,阵列结构实现了更快的电子传输。此外,WO3 半导体与 TiO2 相耦合,构建异质结,扩大了光吸收范围,提高了电子-空穴对分离效率。此外,通过引入助催化剂 CoPi,增加了反应的活性位点,从动力学上提高了催化反应效率。结果表明,CoPi/WO3/TiO2 NBs 的光电流为 10.2 μA/cm2,是 TiO2 NBs 的 1.68 倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Oxygen vacancy-enriched CoPi/TiO2 nanotubes/WO3 electrode for enhanced photoelectrochemical water oxidation

TiO2 has been widely used in photocatalytic water splitting, but its wide band gap and easy recombination carrier limit its further application. In this work, highly ordered TiO2 nanotube arrays (TiO2 NBs) were prepared by anodic oxidation, and more oxygen vacancies were provided by local amorphous. The increase of oxygen vacancy improves the carrier separation efficiency, and the array structure achieves faster electron transport. In addition, WO3 semiconductor was coupled with TiO2 to construct heterojunction, expand the range of light absorption, and enhance the electron–hole pair separation efficiency. In addition, by introducing co-catalyst CoPi, the active site of the reaction was increased, and the catalytic reaction efficiency was improved kinetically. The results show that the photocurrent of CoPi/WO3/TiO2 NBs is 10.2 μA/cm2, which is 1.68 times that of TiO2 NBs.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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