D 波段行波扩展交互放大器的理论研究

IF 1.6 4区计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Chinese Journal of Electronics Pub Date : 2024-11-11 DOI:10.23919/cje.2022.00.345

Zhongtao Cui;Xuesong Yuan;Xiaotao Xu;Dongrui Chen;Yifan Zu;Matthew Thomas Cole;Qingyun Chen;Yang Yan

{"title":"D 波段行波扩展交互放大器的理论研究","authors":"Zhongtao Cui;Xuesong Yuan;Xiaotao Xu;Dongrui Chen;Yifan Zu;Matthew Thomas Cole;Qingyun Chen;Yang Yan","doi":"10.23919/cje.2022.00.345","DOIUrl":null,"url":null,"abstract":"A traveling-wave, extended interaction amplifier is herein investigated for use in millimeter-wave and terahertz amplification sources. By placing engineered extended interaction cavities between the traveling wave structures, higher gain is obtained with a shorter high frequency circuit, compared with conventional traveling wave tubes architectures. The bandwidth of the device is significantly increased relative to extended interaction klystrons. A D-band beam wave interaction circuit of 26 mm long has been designed. Particle-in-cell simulations at 21.5-kV operating voltage, 0.3-A beam current, and 5-mW input power show that the maximum output power reaches 351 W, with a gain of 48.4 dB and 3-dB bandwidth of 1.42 GHz.","PeriodicalId":50701,"journal":{"name":"Chinese Journal of Electronics","volume":"33 6","pages":"1487-1491"},"PeriodicalIF":1.6000,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10748542","citationCount":"0","resultStr":"{\"title\":\"Theoretical Research on a D-Band Traveling Wave Extended Interaction Amplifier\",\"authors\":\"Zhongtao Cui;Xuesong Yuan;Xiaotao Xu;Dongrui Chen;Yifan Zu;Matthew Thomas Cole;Qingyun Chen;Yang Yan\",\"doi\":\"10.23919/cje.2022.00.345\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A traveling-wave, extended interaction amplifier is herein investigated for use in millimeter-wave and terahertz amplification sources. By placing engineered extended interaction cavities between the traveling wave structures, higher gain is obtained with a shorter high frequency circuit, compared with conventional traveling wave tubes architectures. The bandwidth of the device is significantly increased relative to extended interaction klystrons. A D-band beam wave interaction circuit of 26 mm long has been designed. Particle-in-cell simulations at 21.5-kV operating voltage, 0.3-A beam current, and 5-mW input power show that the maximum output power reaches 351 W, with a gain of 48.4 dB and 3-dB bandwidth of 1.42 GHz.\",\"PeriodicalId\":50701,\"journal\":{\"name\":\"Chinese Journal of Electronics\",\"volume\":\"33 6\",\"pages\":\"1487-1491\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10748542\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chinese Journal of Electronics\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10748542/\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chinese Journal of Electronics","FirstCategoryId":"94","ListUrlMain":"https://ieeexplore.ieee.org/document/10748542/","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文研究了一种用于毫米波和太赫兹放大源的行波扩展交互放大器。与传统的行波管结构相比，通过在行波结构之间放置工程扩展相互作用空腔，以更短的高频电路获得更高的增益。与扩展交互 klystrons 相比，该设备的带宽显著增加。我们设计了一个 26 毫米长的 D 波段束波交互电路。在 21.5 kV 工作电压、0.3 A 束电流和 5 mW 输入功率条件下进行的粒子内电池模拟显示，最大输出功率达到 351 W，增益为 48.4 dB，3 dB 带宽为 1.42 GHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Theoretical Research on a D-Band Traveling Wave Extended Interaction Amplifier

A traveling-wave, extended interaction amplifier is herein investigated for use in millimeter-wave and terahertz amplification sources. By placing engineered extended interaction cavities between the traveling wave structures, higher gain is obtained with a shorter high frequency circuit, compared with conventional traveling wave tubes architectures. The bandwidth of the device is significantly increased relative to extended interaction klystrons. A D-band beam wave interaction circuit of 26 mm long has been designed. Particle-in-cell simulations at 21.5-kV operating voltage, 0.3-A beam current, and 5-mW input power show that the maximum output power reaches 351 W, with a gain of 48.4 dB and 3-dB bandwidth of 1.42 GHz.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Chinese Journal of Electronics 工程技术-工程：电子与电气

CiteScore

3.70

自引率

16.70%

发文量

342

审稿时长

12.0 months

期刊介绍： CJE focuses on the emerging fields of electronics, publishing innovative and transformative research papers. Most of the papers published in CJE are from universities and research institutes, presenting their innovative research results. Both theoretical and practical contributions are encouraged, and original research papers reporting novel solutions to the hot topics in electronics are strongly recommended.