Three-Dimensional Semiconductor Network as Regulators of Energy Metabolism Drives Angiogenesis in Bone Regeneration

Insufficient vascularization is a primary cause of bone implantation failure. The management of energy metabolism is crucial for the achievement of vascularized osseointegration. In light of the bone semiconductor property and the electric property of semiconductor heterojunctions, a three-dimensional semiconductor heterojunction network (3D-NTBH) implant has been devised with the objective of regulating cellular energy metabolism, thereby driving angiogenesis for bone regeneration. The three-dimensional heterojunction interfaces facilitate electron transfer and establish internal electric fields at the nanoscale interfaces. The 3D-NTBH was found to noticeably accelerate glycolysis in endothelial cells, thereby rapidly providing energy to support cellular metabolic activities and ultimately driving angiogenesis within the bone tissue. Molecular dynamic simulations have demonstrated that the 3D-NTBH facilitates the exposure of fibronectin’s Arg-Gly-Asp peptide binding site, thereby regulating the glycolysis of endothelial cells. Further evidence suggests that 3D-NTBH promotes early vascular network reconstruction and bone regeneration in vivo. The findings of this research offer a promising research perspective for the design of vascularizing implants.