生长在硅衬底上的 WO3 薄膜：潜在的高 Tc 铁磁半导体

IF 2.5 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Applied Physics A Pub Date : 2024-11-08 DOI:10.1007/s00339-024-08038-w

Nguyen Sy Pham, Nguyen Hoa Hong

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引用次数: 0

摘要

在硅晶片基底上生长的激光照射 WO3 薄膜中发现了定义明确的铁磁性（FM），其 Tc 非常高，约为 800 K。所观察到的磁性似乎与表面有关，氧空位可能在诱导这些氧化物半导体产生铁磁性方面发挥了重要作用。在纳米级 WO3 中首次观察到了极高的 Tc 调频，这表明其在自旋电子应用方面具有巨大的潜力。

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WO3 thin films grown on Si substrates: potential high Tc ferromagnetic semiconductors

Well-defined ferromagnetism (FM) with a very high Tc of about 800 K was found in laser-ablated WO₃ films grown on Si wafer substrates. It seems that the observed magnetism is surface related, and oxygen vacancies might play an important role in inducing FM into these oxide semiconductors. The very high Tc FM is observed for the first time in nanosized-WO₃, indicating a great potential for spintronic applications.

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来源期刊

Applied Physics A 工程技术-材料科学：综合

CiteScore

4.80

自引率

7.40%

发文量

964

审稿时长

38 days

期刊介绍： Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.