Chaowei Yang;Yong Chen;Yunbo Huang;Rui P. Martins;Pui-In Mak
{"title":"具有宽带差分模式二次谐波共振的 5.99 GHz VCO,在偏移 10 MHz 时实现 -138.9 dBc/Hz 相位噪声","authors":"Chaowei Yang;Yong Chen;Yunbo Huang;Rui P. Martins;Pui-In Mak","doi":"10.1109/LMWT.2024.3466131","DOIUrl":null,"url":null,"abstract":"This article presents a voltage-controlled oscillator (VCO) with wideband-differential-mode (DM) second harmonic resonance. It features a single-turn multitap inductor plus a small tail resonator to boost the drain-to-gate voltage gain (\n<inline-formula> <tex-math>$A_{\\text {V}}$ </tex-math></inline-formula>\n). It also creates intrinsic-high-Q impedance peaks at the fundamental and double oscillation frequencies, which simultaneously achieves phase noise (PN) and 1/\n<inline-formula> <tex-math>${f} ^{3}$ </tex-math></inline-formula>\n PN-corner reduction. Prototyped in 65-nm CMOS, the 5.99-GHz VCO scores a −138.9 dBc/Hz PN at an offset of 10 MHz and consumes 3.17 mW of power with a 0.67 V supply. The achieved figure-of-merit (FoM) values were 177.5, 186.6, and 189.4 dBc/Hz at an offset of 0.1, 1, and 10 MHz, with a 1/\n<inline-formula> <tex-math>${f} ^{3}$ </tex-math></inline-formula>\n PN corner of 400 kHz. Over a 14% tuning range (TR), without any additional harmonic tuning, the VCO upholds a consistent FoM >189 dBc/Hz at an offset of 10 MHz. The core area is 0.465 mm2.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1267-1270"},"PeriodicalIF":0.0000,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 5.99-GHz VCO With Wideband-Differential-Mode Second Harmonic Resonance Achieving −138.9 dBc/Hz Phase Noise at an Offset of 10 MHz\",\"authors\":\"Chaowei Yang;Yong Chen;Yunbo Huang;Rui P. Martins;Pui-In Mak\",\"doi\":\"10.1109/LMWT.2024.3466131\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article presents a voltage-controlled oscillator (VCO) with wideband-differential-mode (DM) second harmonic resonance. It features a single-turn multitap inductor plus a small tail resonator to boost the drain-to-gate voltage gain (\\n<inline-formula> <tex-math>$A_{\\\\text {V}}$ </tex-math></inline-formula>\\n). It also creates intrinsic-high-Q impedance peaks at the fundamental and double oscillation frequencies, which simultaneously achieves phase noise (PN) and 1/\\n<inline-formula> <tex-math>${f} ^{3}$ </tex-math></inline-formula>\\n PN-corner reduction. Prototyped in 65-nm CMOS, the 5.99-GHz VCO scores a −138.9 dBc/Hz PN at an offset of 10 MHz and consumes 3.17 mW of power with a 0.67 V supply. The achieved figure-of-merit (FoM) values were 177.5, 186.6, and 189.4 dBc/Hz at an offset of 0.1, 1, and 10 MHz, with a 1/\\n<inline-formula> <tex-math>${f} ^{3}$ </tex-math></inline-formula>\\n PN corner of 400 kHz. Over a 14% tuning range (TR), without any additional harmonic tuning, the VCO upholds a consistent FoM >189 dBc/Hz at an offset of 10 MHz. The core area is 0.465 mm2.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"34 11\",\"pages\":\"1267-1270\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10701044/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10701044/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 5.99-GHz VCO With Wideband-Differential-Mode Second Harmonic Resonance Achieving −138.9 dBc/Hz Phase Noise at an Offset of 10 MHz
This article presents a voltage-controlled oscillator (VCO) with wideband-differential-mode (DM) second harmonic resonance. It features a single-turn multitap inductor plus a small tail resonator to boost the drain-to-gate voltage gain (
$A_{\text {V}}$
). It also creates intrinsic-high-Q impedance peaks at the fundamental and double oscillation frequencies, which simultaneously achieves phase noise (PN) and 1/
${f} ^{3}$
PN-corner reduction. Prototyped in 65-nm CMOS, the 5.99-GHz VCO scores a −138.9 dBc/Hz PN at an offset of 10 MHz and consumes 3.17 mW of power with a 0.67 V supply. The achieved figure-of-merit (FoM) values were 177.5, 186.6, and 189.4 dBc/Hz at an offset of 0.1, 1, and 10 MHz, with a 1/
${f} ^{3}$
PN corner of 400 kHz. Over a 14% tuning range (TR), without any additional harmonic tuning, the VCO upholds a consistent FoM >189 dBc/Hz at an offset of 10 MHz. The core area is 0.465 mm2.