具有宽带差分模式二次谐波共振的 5.99 GHz VCO,在偏移 10 MHz 时实现 -138.9 dBc/Hz 相位噪声

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Chaowei Yang;Yong Chen;Yunbo Huang;Rui P. Martins;Pui-In Mak
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引用次数: 0

摘要

本文介绍了一种具有宽带差模(DM)二次谐波谐振的压控振荡器(VCO)。它采用单匝多抽头电感器和小型尾谐振器来提高漏极至栅极电压增益($A_{\text {V}}$)。它还能在基频和双振荡频率上产生本征高 Q 阻抗峰值,从而同时实现相位噪声 (PN) 和 1/ ${f}^{3}$ PN 值。^{3}$ PN 角降低。这款 5.99-GHz VCO 采用 65-nm CMOS 制作原型,在偏移 10 MHz 时的 PN 值为 -138.9 dBc/Hz,在 0.67 V 电源电压下的功耗为 3.17 mW。在偏移 0.1、1 和 10 MHz 时,达到的优点系数 (FoM) 值分别为 177.5、186.6 和 189.4 dBc/Hz,1/${f}^{3}$ PN 值分别为 0.1、1 和 10 MHz。^{3}$ PN 角为 400 kHz。在 14% 的调谐范围内 (TR),没有任何额外的谐波调谐,VCO 在偏移 10 MHz 时保持稳定的 FoM >189 dBc/Hz。核心面积为 0.465 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 5.99-GHz VCO With Wideband-Differential-Mode Second Harmonic Resonance Achieving −138.9 dBc/Hz Phase Noise at an Offset of 10 MHz
This article presents a voltage-controlled oscillator (VCO) with wideband-differential-mode (DM) second harmonic resonance. It features a single-turn multitap inductor plus a small tail resonator to boost the drain-to-gate voltage gain ( $A_{\text {V}}$ ). It also creates intrinsic-high-Q impedance peaks at the fundamental and double oscillation frequencies, which simultaneously achieves phase noise (PN) and 1/ ${f} ^{3}$ PN-corner reduction. Prototyped in 65-nm CMOS, the 5.99-GHz VCO scores a −138.9 dBc/Hz PN at an offset of 10 MHz and consumes 3.17 mW of power with a 0.67 V supply. The achieved figure-of-merit (FoM) values were 177.5, 186.6, and 189.4 dBc/Hz at an offset of 0.1, 1, and 10 MHz, with a 1/ ${f} ^{3}$ PN corner of 400 kHz. Over a 14% tuning range (TR), without any additional harmonic tuning, the VCO upholds a consistent FoM >189 dBc/Hz at an offset of 10 MHz. The core area is 0.465 mm2.
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