Performance assessment of SiGe extended four corner source TFET for biosensing applications

In this paper, the performance of a novel SiGe extended four corner source tunneling field–effect transistor (SiGe EFCS TFET) based dielectrically modulated label-free biosensor has been investigated for biosensing applications. Using a combination of heterostructure (SiGe/Si) and extended four corner source (EFCS) lead to increased band–to–band tunneling (BTBT) probability, improved gate control and superior drain current sensitivity for biomolecule conjugation in comparison with a conventional TFET and Si EFCS TFET structures of similar dimensions. The influence of both the charge–neutral and charged biomolecules on the sensitivity performance is investigated using the Silvaco TCAD ATLAS semiconductor device simulator with a calibrated nonlocal BTBT model. Four different kinds of biomolecules such as Streptavidin, Ferro–cytochrome c, Keratin and Gelatin with various charge density values were used for this purpose. In order to model steric hindrance effects in partially filled cavities, in addition to various fill factors, four different step profile patterns have considered such as convex, concave, decreasing and increasing step profiles. Also, the dependence of the nanogap cavity properties on the sensing performance in terms of the length and thickness is investigated. A maximum drain current sensitivity of 1.69 × 10⁵ is achieved in SiGe EFCS TFET for Gelatin biomolecules in a fully filled nanogap cavity at overdrive and drain voltages of 0.5 V.