Lei Yin, Ruiqing Cheng, Xuhao Wan, Jiahui Ding, Jun Jia, Yao Wen, Xiaoze Liu, Yuzheng Guo, Jun He
{"title":"用于低功率二维电子器件的高κ单晶电介质","authors":"Lei Yin, Ruiqing Cheng, Xuhao Wan, Jiahui Ding, Jun Jia, Yao Wen, Xiaoze Liu, Yuzheng Guo, Jun He","doi":"10.1038/s41563-024-02043-3","DOIUrl":null,"url":null,"abstract":"<p>The downscaling of complementary metal-oxide-semiconductor technology has produced breakthroughs in electronics, but more extreme scaling has hit a wall of device performance degradation. One key challenge is the development of insulators with high dielectric constant, wide bandgap and high tunnel masses. Here, we show that two-dimensional monocrystalline gadolinium pentoxide, which is devised through combining particle swarm optimization algorithm and theoretical calculations and synthesized via van der Waals epitaxy, could exhibit a high dielectric constant of ~25.5 and a wide bandgap simultaneously. A desirable equivalent oxide thickness down to 1 nm with an ultralow leakage current of ~10<sup>−4</sup> A cm<sup>−2</sup> even at 5 MV cm<sup>−1</sup> is achieved. The molybdenum disulfide transistors gated by gadolinium pentoxide exhibit high on/off ratios over 10<sup>8</sup> and near-Boltzmann-limit subthreshold swing at an operation voltage of 0.5 V. We also constructed inverter circuits with high gain and nanowatt power consumption. This reliable approach to integrating ultrathin monocrystalline insulators paves the way to future nanoelectronics.</p>","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"144 1","pages":""},"PeriodicalIF":37.2000,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-κ monocrystalline dielectrics for low-power two-dimensional electronics\",\"authors\":\"Lei Yin, Ruiqing Cheng, Xuhao Wan, Jiahui Ding, Jun Jia, Yao Wen, Xiaoze Liu, Yuzheng Guo, Jun He\",\"doi\":\"10.1038/s41563-024-02043-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The downscaling of complementary metal-oxide-semiconductor technology has produced breakthroughs in electronics, but more extreme scaling has hit a wall of device performance degradation. One key challenge is the development of insulators with high dielectric constant, wide bandgap and high tunnel masses. Here, we show that two-dimensional monocrystalline gadolinium pentoxide, which is devised through combining particle swarm optimization algorithm and theoretical calculations and synthesized via van der Waals epitaxy, could exhibit a high dielectric constant of ~25.5 and a wide bandgap simultaneously. A desirable equivalent oxide thickness down to 1 nm with an ultralow leakage current of ~10<sup>−4</sup> A cm<sup>−2</sup> even at 5 MV cm<sup>−1</sup> is achieved. The molybdenum disulfide transistors gated by gadolinium pentoxide exhibit high on/off ratios over 10<sup>8</sup> and near-Boltzmann-limit subthreshold swing at an operation voltage of 0.5 V. We also constructed inverter circuits with high gain and nanowatt power consumption. This reliable approach to integrating ultrathin monocrystalline insulators paves the way to future nanoelectronics.</p>\",\"PeriodicalId\":19058,\"journal\":{\"name\":\"Nature Materials\",\"volume\":\"144 1\",\"pages\":\"\"},\"PeriodicalIF\":37.2000,\"publicationDate\":\"2024-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nature Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1038/s41563-024-02043-3\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1038/s41563-024-02043-3","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
摘要
互补金属氧化物半导体技术的规模缩小在电子领域取得了突破性进展,但更极端的规模缩小却遇到了器件性能下降的障碍。其中一个关键挑战是开发具有高介电常数、宽带隙和高隧道质量的绝缘体。在这里,我们展示了通过粒子群优化算法和理论计算相结合设计并通过范德华外延合成的二维单晶五氧化二钆,它可以同时表现出 ~25.5 的高介电常数和宽带隙。即使在 5 MV cm-1 的条件下,也能实现低至 1 nm 的理想等效氧化物厚度和 ~10-4 A cm-2 的超低漏电流。由五氧化二钆栅极的二硫化钼晶体管显示出超过 108 的高导通/截止比,并且在 0.5 V 工作电压下具有接近波尔兹曼极限的次阈值摆幅。我们还构建了具有高增益和纳瓦功耗的逆变器电路。这种集成超薄单晶绝缘体的可靠方法为未来的纳米电子学铺平了道路。
High-κ monocrystalline dielectrics for low-power two-dimensional electronics
The downscaling of complementary metal-oxide-semiconductor technology has produced breakthroughs in electronics, but more extreme scaling has hit a wall of device performance degradation. One key challenge is the development of insulators with high dielectric constant, wide bandgap and high tunnel masses. Here, we show that two-dimensional monocrystalline gadolinium pentoxide, which is devised through combining particle swarm optimization algorithm and theoretical calculations and synthesized via van der Waals epitaxy, could exhibit a high dielectric constant of ~25.5 and a wide bandgap simultaneously. A desirable equivalent oxide thickness down to 1 nm with an ultralow leakage current of ~10−4 A cm−2 even at 5 MV cm−1 is achieved. The molybdenum disulfide transistors gated by gadolinium pentoxide exhibit high on/off ratios over 108 and near-Boltzmann-limit subthreshold swing at an operation voltage of 0.5 V. We also constructed inverter circuits with high gain and nanowatt power consumption. This reliable approach to integrating ultrathin monocrystalline insulators paves the way to future nanoelectronics.
期刊介绍:
Nature Materials is a monthly multi-disciplinary journal aimed at bringing together cutting-edge research across the entire spectrum of materials science and engineering. It covers all applied and fundamental aspects of the synthesis/processing, structure/composition, properties, and performance of materials. The journal recognizes that materials research has an increasing impact on classical disciplines such as physics, chemistry, and biology.
Additionally, Nature Materials provides a forum for the development of a common identity among materials scientists and encourages interdisciplinary collaboration. It takes an integrated and balanced approach to all areas of materials research, fostering the exchange of ideas between scientists involved in different disciplines.
Nature Materials is an invaluable resource for scientists in academia and industry who are active in discovering and developing materials and materials-related concepts. It offers engaging and informative papers of exceptional significance and quality, with the aim of influencing the development of society in the future.