Elias Semlali*, Evelyne Gil, Geoffrey Avit, Yamina André, Arthur Sauvagnat, Jihen Jridi, Andriy V. Moskalenko, Philip A. Shields, Névine Rochat, Adeline Grenier and Agnès Trassoudaine*,
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引用次数: 0
摘要
利用氢化物气相外延 (HVPE) 技术，在用氮化硅掩蔽的 c 平面蓝宝石模板上进行了氮化镓纳米线的选择性面积生长 (SAG)。GaN 纳米线呈现出各种形态，这些形态是图案设计、气态 Ga 前驱体的分压、载气成分和生长温度的函数。通过对各刻面相对生长速度的比较研究，阐明了这些形态。CL测量结果表明，在930 °C下生长的氮化镓纳米线具有较高的发射质量。这项研究将 HVPE 作为一种有效的外延技术，用于以低成本生长基于 III-N 纳米结构的器件。
Selective area growth (SAG) of GaN nanowires was performed on GaN on c-plane sapphire templates masked with SiN using hydride vapor phase epitaxy (HVPE). GaN nanowires exhibited various morphologies, discussed as a function of the pattern design, the partial pressure of the Ga gaseous precursor, the composition of the carrier gas, and the growth temperature. The morphologies are elucidated by involving a comparative study of growth rates of facets relative to each other. CL measurements showed high emission quality for GaN nanowires grown at 930 °C. This work places HVPE as an effective epitaxial technique for growing III–N nanostructure-based devices at a low cost.
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